SL2016 Datasheet and Replacement
Type Designator: SL2016
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pdⓘ - Maximum Power Dissipation: 0.7 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 20 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 10 V
|Id|ⓘ - Maximum Drain Current: 4.7 A
Tjⓘ - Maximum Junction Temperature: 150 °C
trⓘ - Rise Time: 57 nS
Cossⓘ - Output Capacitance: 35 pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.047 Ohm
Package: SOT23
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SL2016 Datasheet (PDF)
sl2016.pdf

SL2016 20V/4.7A N-Channel MOSFETProduct SummaryFeaturesVDS RDS(ON) MAX ID MAX Trench Power LV MOSFET technology47m@4.5VD2 High Power and current handing capability20V 4.7AS1D165m@2.5VApplication PWM applicationD Load switchSDGSOT-23 top view Schematic diagramM16: Device codeM16G SMarking and pin assignment Absolute Maximum Ratings
Datasheet: IRFP344 , IRFP350 , IRFP350A , IRFP350FI , IRFP350LC , IRFP351 , IRFP352 , IRFP353 , 2SK3568 , IRFP360 , IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 .
History: JST80N30T2A | FRX130D2 | STL9P2UH7 | IPB80N08S2L-07 | AONR21305C | LSF80R980GT | BRF2N65
Keywords - SL2016 MOSFET datasheet
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History: JST80N30T2A | FRX130D2 | STL9P2UH7 | IPB80N08S2L-07 | AONR21305C | LSF80R980GT | BRF2N65



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