All MOSFET. SL2016 Datasheet

 

SL2016 Datasheet and Replacement


   Type Designator: SL2016
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 0.7 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 20 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 10 V
   |Id| ⓘ - Maximum Drain Current: 4.7 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 57 nS
   Cossⓘ - Output Capacitance: 35 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.047 Ohm
   Package: SOT23
 

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SL2016 Datasheet (PDF)

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SL2016

SL2016 20V/4.7A N-Channel MOSFETProduct SummaryFeaturesVDS RDS(ON) MAX ID MAX Trench Power LV MOSFET technology47m@4.5VD2 High Power and current handing capability20V 4.7AS1D165m@2.5VApplication PWM applicationD Load switchSDGSOT-23 top view Schematic diagramM16: Device codeM16G SMarking and pin assignment Absolute Maximum Ratings

Datasheet: SL12N100F , SL12N100K , SL12N100T , SL12P03S , SL15N10A , SL160N03R , SL18N20 , SL18N50F , 2N60 , SL2026 , SL20N03 , SL20N10 , SL2102 , SL2192 , SL2302M , SL2309 , SL2309A .

History: 2SK1347 | SWN7N65D | RUH120N140S | SWT47N65K2 | FDS8858CZ | SWU12N65D | 4N65L-TF3T-T

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