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SL2016 Specs and Replacement

Type Designator: SL2016

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 0.7 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 20 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 10 V

|Id| ⓘ - Maximum Drain Current: 4.7 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 57 nS

Cossⓘ - Output Capacitance: 35 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.047 Ohm

Package: SOT23

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SL2016 datasheet

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SL2016

SL2016 20V/4.7A N-Channel MOSFET Product Summary Features VDS RDS(ON) MAX ID MAX Trench Power LV MOSFET technology 47m @4.5VD2 High Power and current handing capability 20V 4.7A S1 D1 65m @2.5V Application PWM application D Load switch S D G SOT-23 top view Schematic diagram M16 Device code M16 G S Marking and pin assignment Absolute Maximum Ratings ... See More ⇒

Detailed specifications: SL12N100F, SL12N100K, SL12N100T, SL12P03S, SL15N10A, SL160N03R, SL18N20, SL18N50F, 2N60, SL2026, SL20N03, SL20N10, SL2102, SL2192, SL2302M, SL2309, SL2309A

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