SL2016 Datasheet and Replacement
Type Designator: SL2016
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pd ⓘ - Maximum Power Dissipation: 0.7 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 20 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 10 V
|Id| ⓘ - Maximum Drain Current: 4.7 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
tr ⓘ - Rise Time: 57 nS
Cossⓘ - Output Capacitance: 35 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.047 Ohm
Package: SOT23
SL2016 substitution
SL2016 Datasheet (PDF)
sl2016.pdf

SL2016 20V/4.7A N-Channel MOSFETProduct SummaryFeaturesVDS RDS(ON) MAX ID MAX Trench Power LV MOSFET technology47m@4.5VD2 High Power and current handing capability20V 4.7AS1D165m@2.5VApplication PWM applicationD Load switchSDGSOT-23 top view Schematic diagramM16: Device codeM16G SMarking and pin assignment Absolute Maximum Ratings
Datasheet: SL12N100F , SL12N100K , SL12N100T , SL12P03S , SL15N10A , SL160N03R , SL18N20 , SL18N50F , IRF830 , SL2026 , SL20N03 , SL20N10 , SL2102 , SL2192 , SL2302M , SL2309 , SL2309A .
History: PSMN6R0-30YLD
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History: PSMN6R0-30YLD



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