All MOSFET. SL20N03 Datasheet

 

SL20N03 Datasheet and Replacement


   Type Designator: SL20N03
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 12 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 12 V
   |Id|ⓘ - Maximum Drain Current: 20 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   trⓘ - Rise Time: 28.3 nS
   Cossⓘ - Output Capacitance: 58 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.035 Ohm
   Package: TO252
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SL20N03 Datasheet (PDF)

 ..1. Size:676K  slkor
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SL20N03

SL20N03 30V/20A N-Channel MOSFETFeatures Trench Power LV MOSFET technologyProduct Summary High density cell design for low RDS(ON)VDS RDS(ON) MAX ID MAX35m@10VD230V S1 20AD145m@4.5VApplication Battery protection Load switchD Power managementDDGS20N03 : Device code20N03XXXXXX : CodeTO-252 top viewSchematic diagramXXXXXXDS

 9.1. Size:887K  slkor
 sl20n10.pdf pdf_icon

SL20N03

SL20N10 N-Channel MOSFETFeatures Product Summary Super high density cell design VDS RDS(ON) MAX ID MAXfor extremely low RDS(ON) 80m@10VD2S1100V 20A Exceptional on-resistance and D1110m@4.5Vmaximum DC current capability ApplicationD Power Management in Note book DC/DC Converter Load Switch LCD Display inverter DGSTO-252 top v

Datasheet: FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , GMM3x120-0075X2-SMD , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , CS150N03A8 , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL , FDMS3610S , GWM100-0085X1-SMD , FDMS3606S , GWM100-01X1-SL .

History: GSM3030 | IRF6612

Keywords - SL20N03 MOSFET datasheet

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