SL20N10 Specs and Replacement
Type Designator: SL20N10
Type of Transistor: MOSFET
Type of Control Channel: N-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 45 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 100 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 20 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Electrical Characteristics
tr ⓘ - Rise Time: 430 nS
Cossⓘ - Output Capacitance: 85 pF
RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.08 Ohm
Package: TO252
SL20N10 substitution
- MOSFET ⓘ Cross-Reference Search
SL20N10 datasheet
sl20n10.pdf
SL20N10 N-Channel MOSFET Features Product Summary Super high density cell design VDS RDS(ON) MAX ID MAX for extremely low RDS(ON) 80m @10V D2 S1 100V 20A Exceptional on-resistance and D1 110m @4.5V maximum DC current capability Application D Power Management in Note book DC/DC Converter Load Switch LCD Display inverter D G S TO-252 top v... See More ⇒
sl20n03.pdf
SL20N03 30V/20A N-Channel MOSFET Features Trench Power LV MOSFET technology Product Summary High density cell design for low RDS(ON) VDS RDS(ON) MAX ID MAX 35m @10V D2 30V S1 20A D1 45m @4.5V Application Battery protection Load switch D Power management D D G S 20N03 Device code 20N03 XXXXXX Code TO-252 top view Schematic diagram XXXXXX D S... See More ⇒
Detailed specifications: SL12P03S, SL15N10A, SL160N03R, SL18N20, SL18N50F, SL2016, SL2026, SL20N03, 75N75, SL2102, SL2192, SL2302M, SL2309, SL2309A, SL2314, SL2318, SL2319A
Keywords - SL20N10 MOSFET specs
SL20N10 cross reference
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SL20N10 substitution
SL20N10 replacement
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