All MOSFET. SL20N10 Datasheet

 

SL20N10 Datasheet and Replacement


   Type Designator: SL20N10
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 45 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 100 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 20 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 430 nS
   Cossⓘ - Output Capacitance: 85 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.08 Ohm
   Package: TO252
 

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SL20N10 Datasheet (PDF)

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SL20N10

SL20N10 N-Channel MOSFETFeatures Product Summary Super high density cell design VDS RDS(ON) MAX ID MAXfor extremely low RDS(ON) 80m@10VD2S1100V 20A Exceptional on-resistance and D1110m@4.5Vmaximum DC current capability ApplicationD Power Management in Note book DC/DC Converter Load Switch LCD Display inverter DGSTO-252 top v

 9.1. Size:676K  slkor
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SL20N10

SL20N03 30V/20A N-Channel MOSFETFeatures Trench Power LV MOSFET technologyProduct Summary High density cell design for low RDS(ON)VDS RDS(ON) MAX ID MAX35m@10VD230V S1 20AD145m@4.5VApplication Battery protection Load switchD Power managementDDGS20N03 : Device code20N03XXXXXX : CodeTO-252 top viewSchematic diagramXXXXXXDS

Datasheet: SL12P03S , SL15N10A , SL160N03R , SL18N20 , SL18N50F , SL2016 , SL2026 , SL20N03 , IRF520 , SL2102 , SL2192 , SL2302M , SL2309 , SL2309A , SL2314 , SL2318 , SL2319A .

History: BSO130P03S | BUZ61A | DH8004D | BSZ058N03MS | AFP4925 | STG8810A | TF3410

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