SL2102 Specs and Replacement
Type Designator: SL2102
Type of Transistor: MOSFET
Type of Control Channel: N-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 0.7 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 20 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 10 V
|Id| ⓘ - Maximum Drain Current: 2 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Electrical Characteristics
tr ⓘ - Rise Time: 54 nS
Cossⓘ - Output Capacitance: 46 pF
RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.068 Ohm
Package: SOT323
SL2102 substitution
- MOSFET ⓘ Cross-Reference Search
SL2102 datasheet
sl2102.pdf
SL2102 N-Channel Enhancement Mode Field Effect Transistor Product Summary V 20V DS I 2.0A D R ( at V =4.5V) 68 mohm DS(ON) GS R ( at V =2.5V) 115 mohm DS(ON) GS General Description Trench Power LV MOSFET technology High Power and current handing capability Applications PWM application Load switch Absolute Maximum Ratings (T =25 un... See More ⇒
ap65sl210afi.pdf
AP65SL210AFI Halogen-Free Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET 100% Rg & UIS Test BVDSS 650V D Fast Switching Characteristic RDS(ON) 0.21 Simple Drive Requirement ID3 16.2A G RoHS Compliant & Halogen-Free S Description AP65SL210AF series are from Advanced Power innovated design and silicon process technology to achieve t... See More ⇒
Detailed specifications: SL15N10A, SL160N03R, SL18N20, SL18N50F, SL2016, SL2026, SL20N03, SL20N10, AO3400A, SL2192, SL2302M, SL2309, SL2309A, SL2314, SL2318, SL2319A, SL2328A
Keywords - SL2102 MOSFET specs
SL2102 cross reference
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