SL2102 Datasheet and Replacement
Type Designator: SL2102
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pd ⓘ - Maximum Power Dissipation: 0.7 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 20 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 10 V
|Id| ⓘ - Maximum Drain Current: 2 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
tr ⓘ - Rise Time: 54 nS
Cossⓘ - Output Capacitance: 46 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.068 Ohm
Package: SOT323
SL2102 substitution
SL2102 Datasheet (PDF)
sl2102.pdf

SL2102N-Channel Enhancement Mode Field Effect TransistorProduct Summary V 20V DS I 2.0AD R ( at V =4.5V) 68 mohmDS(ON) GS R ( at V =2.5V) 115 mohmDS(ON) GSGeneral Description Trench Power LV MOSFET technology High Power and current handing capabilityApplications PWM application Load switch Absolute Maximum Ratings (T =25un
ap65sl210afi.pdf

AP65SL210AFIHalogen-Free ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET 100% Rg & UIS Test BVDSS 650VD Fast Switching Characteristic RDS(ON) 0.21 Simple Drive Requirement ID3 16.2AG RoHS Compliant & Halogen-FreeSDescriptionAP65SL210AF series are from Advanced Power innovated designand silicon process technology to achieve t
Datasheet: SL15N10A , SL160N03R , SL18N20 , SL18N50F , SL2016 , SL2026 , SL20N03 , SL20N10 , RU6888R , SL2192 , SL2302M , SL2309 , SL2309A , SL2314 , SL2318 , SL2319A , SL2328A .
History: PTA08N100
Keywords - SL2102 MOSFET datasheet
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History: PTA08N100



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