All MOSFET. SL25N10 Datasheet

 

SL25N10 Datasheet and Replacement


   Type Designator: SL25N10
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 34 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 100 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id|ⓘ - Maximum Drain Current: 25 A
   Tjⓘ - Maximum Junction Temperature: 175 °C
   trⓘ - Rise Time: 24 nS
   Cossⓘ - Output Capacitance: 33 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.045 Ohm
   Package: TO252
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SL25N10 Datasheet (PDF)

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SL25N10

SL25N10N-Channel Enhancement Mode Field Effect TransistorProduct Summary V 100V DSI 25A DR ( at V = 10V) 45mohm DS(ON) GSGeneral Description Trench Power MV MOSFET technology Excellent package for heat dissipation High density cell design for low RDS(ON)Applications DC-DC Converters Power management functions Absolute Maximum Rat

Datasheet: AM3401 , AM3402N , AM3403P , AM3405P , AM3406 , AM3406N , AM3407 , AM3407PE , IRFZ48N , AM3412N , AM3413 , AM3413P , AM3415 , AM3415A , AM3416 , AM3422 , AM3423P .

History: BSC077N12NS3G | DH150N12B | 12N65KG-TF1-T | AONS36303 | R5016ANJ | BSB280N15NZ3G | ELM13401CA

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