All MOSFET. SL25N10 Datasheet

 

SL25N10 Datasheet and Replacement


   Type Designator: SL25N10
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 34 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 100 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 25 A
   Tj ⓘ - Maximum Junction Temperature: 175 °C
   tr ⓘ - Rise Time: 24 nS
   Cossⓘ - Output Capacitance: 33 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.045 Ohm
   Package: TO252
 

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SL25N10 Datasheet (PDF)

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SL25N10

SL25N10N-Channel Enhancement Mode Field Effect TransistorProduct Summary V 100V DSI 25A DR ( at V = 10V) 45mohm DS(ON) GSGeneral Description Trench Power MV MOSFET technology Excellent package for heat dissipation High density cell design for low RDS(ON)Applications DC-DC Converters Power management functions Absolute Maximum Rat

Datasheet: SL2309A , SL2314 , SL2318 , SL2319A , SL2328A , SL2333A , SL2343 , SL2347 , IRF9640 , SL2P03F , SL2P10A , SL30N02D , SL30N06D , SL3134K , SL3139K , SL3139T , SL3416 .

History: VBFB165R04 | STS3417 | 2SK2167 | GSM4924W | HGA040N06SL | IPT012N06N | JFPC8N60C

Keywords - SL25N10 MOSFET datasheet

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