All MOSFET. SL2P10A Datasheet

 

SL2P10A Datasheet and Replacement


   Type Designator: SL2P10A
   Type of Transistor: MOSFET
   Type of Control Channel: P -Channel
   Pd ⓘ - Maximum Power Dissipation: 1 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 100 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 2 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 6.8 nS
   Cossⓘ - Output Capacitance: 29 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.65 Ohm
   Package: SOT23
 

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SL2P10A Datasheet (PDF)

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SL2P10A

SL2P10A -100V/-2A P-Channel MOSFETProduct SummaryFeaturesVDS RDS(ON) MAX ID MAX Super Low Gate Charge650m@10VD2 Excellent Cdv/dt effect decline-100V S1 -2AD1700m@4.5V Green Device Available Advanced high cell density Trench technologyApplicationD Video monitor Power managementSGSOT-23 top view Schematic diagramAbsolute Maximum Ratin

Datasheet: SL2318 , SL2319A , SL2328A , SL2333A , SL2343 , SL2347 , SL25N10 , SL2P03F , MMD60R360PRH , SL30N02D , SL30N06D , SL3134K , SL3139K , SL3139T , SL3416 , SL4041 , SL40P05Y .

History: SI4622DY | VBZL80N03

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