SL2P10A MOSFET. Datasheet pdf. Equivalent
Type Designator: SL2P10A
Type of Transistor: MOSFET
Type of Control Channel: P -Channel
Pdⓘ - Maximum Power Dissipation: 1 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 100 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 2.5 V
|Id|ⓘ - Maximum Drain Current: 2 A
Tjⓘ - Maximum Junction Temperature: 150 °C
Qgⓘ - Total Gate Charge: 4.5 nC
trⓘ - Rise Time: 6.8 nS
Cossⓘ - Output Capacitance: 29 pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.65 Ohm
Package: SOT23
SL2P10A Transistor Equivalent Substitute - MOSFET Cross-Reference Search
SL2P10A Datasheet (PDF)
sl2p10a.pdf
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SL2P10A -100V/-2A P-Channel MOSFETProduct SummaryFeaturesVDS RDS(ON) MAX ID MAX Super Low Gate Charge650m@10VD2 Excellent Cdv/dt effect decline-100V S1 -2AD1700m@4.5V Green Device Available Advanced high cell density Trench technologyApplicationD Video monitor Power managementSGSOT-23 top view Schematic diagramAbsolute Maximum Ratin
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