All MOSFET. SL30N02D Datasheet

 

SL30N02D Datasheet and Replacement


   Type Designator: SL30N02D
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 70 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 150 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 28 nS
   Cossⓘ - Output Capacitance: 393 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.004 Ohm
   Package: TO252
 

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SL30N02D Datasheet (PDF)

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SL30N02D

SL30N02D30V N-Channel Power MosfetGeneral DescriptionThese N-channel enhancement mode power mosfets usedadvanced trench technology design, provided excellent Rdsonand low gate charge. Which accords with the RoHS standard.FeaturesVDS = 30V,ID =150ARDS(ON)2.8 m(Typ) @ VGS =10VRDS(ON)4.4m(Typ) @ VGS =4.5VAdvanced Trench TechnologyProvide Excellent RDS(ON) and Low Ga

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SL30N02D

SL30N06DN-Channel Enhancement Mode Power MOSFET Description The uses advanced trench technology and SL30N06Ddesign to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features VDS =60V,ID =30A RDS(ON)

Datasheet: SL2319A , SL2328A , SL2333A , SL2343 , SL2347 , SL25N10 , SL2P03F , SL2P10A , 2N7002 , SL30N06D , SL3134K , SL3139K , SL3139T , SL3416 , SL4041 , SL40P05Y , SL4184 .

History: PTD4080B | 5LP01S | SM3337PSQG | AP10TN135H | INK0001AM1 | PSMN5R0-80BS | SWD5N65K

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