SL30N02D MOSFET Datasheet: N-Ch, 30V, 150A. Full specification with pinout and replacement list

SL30N02D Specs and Replacement

Type Designator: SL30N02D

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 70 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 150 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 28 nS

Cossⓘ - Output Capacitance: 393 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.004 Ohm

Package: TO252

SL30N02D substitution

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SL30N02D datasheet

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SL30N02D 30V N-Channel Power Mosfet General Description These N-channel enhancement mode power mosfets used advanced trench technology design, provided excellent Rdson and low gate charge. Which accords with the RoHS standard. Features VDS = 30V,ID =150A RDS(ON) 2.8 m (Typ) @ VGS =10V RDS(ON) 4.4m (Typ) @ VGS =4.5V Advanced Trench Technology Provide Excellent RDS(ON) and Low Ga... See More ⇒

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SL30N06D N-Channel Enhancement Mode Power MOSFET Description The uses advanced trench technology and SL30N06D design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features VDS =60V,ID =30A RDS(ON) ... See More ⇒

Detailed specifications: SL2319A, SL2328A, SL2333A, SL2343, SL2347, SL25N10, SL2P03F, SL2P10A, MMIS60R580P, SL30N06D, SL3134K, SL3139K, SL3139T, SL3416, SL4041, SL40P05Y, SL4184