All MOSFET. SL30N06D Datasheet

 

SL30N06D MOSFET. Datasheet pdf. Equivalent


   Type Designator: SL30N06D
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 45 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 60 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 2.5 V
   |Id|ⓘ - Maximum Drain Current: 30 A
   Tjⓘ - Maximum Junction Temperature: 175 °C
   Qgⓘ - Total Gate Charge: 47 nC
   trⓘ - Rise Time: 2.6 nS
   Cossⓘ - Output Capacitance: 60 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.035 Ohm
   Package: TO252

 SL30N06D Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

SL30N06D Datasheet (PDF)

 ..1. Size:1591K  slkor
 sl30n06d.pdf

SL30N06D SL30N06D

SL30N06DN-Channel Enhancement Mode Power MOSFET Description The uses advanced trench technology and SL30N06Ddesign to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features VDS =60V,ID =30A RDS(ON)

 8.1. Size:2425K  slkor
 sl30n02d.pdf

SL30N06D SL30N06D

SL30N02D30V N-Channel Power MosfetGeneral DescriptionThese N-channel enhancement mode power mosfets usedadvanced trench technology design, provided excellent Rdsonand low gate charge. Which accords with the RoHS standard.FeaturesVDS = 30V,ID =150ARDS(ON)2.8 m(Typ) @ VGS =10VRDS(ON)4.4m(Typ) @ VGS =4.5VAdvanced Trench TechnologyProvide Excellent RDS(ON) and Low Ga

Datasheet: AM3401 , AM3402N , AM3403P , AM3405P , AM3406 , AM3406N , AM3407 , AM3407PE , 7N60 , AM3412N , AM3413 , AM3413P , AM3415 , AM3415A , AM3416 , AM3422 , AM3423P .

 

 
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