All MOSFET. SL4813A Datasheet

 

SL4813A Datasheet and Replacement


   Type Designator: SL4813A
   Type of Transistor: MOSFET
   Type of Control Channel: P -Channel
   Pd ⓘ - Maximum Power Dissipation: 2.5 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 2 V
   |Id| ⓘ - Maximum Drain Current: 7.1 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 44 nS
   Cossⓘ - Output Capacitance: 178 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.025 Ohm
   Package: SOP8
 

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SL4813A Datasheet (PDF)

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SL4813A

SL4813AP-Channel Enhancement Mode Field Effect TransistorProduct Summary V -30VDS ID -7.1A R ( at VGS=-10V)DS(ON)25mohm R ( at VGS=-4.5V)DS(ON) 40mohm 100% V TestedDSGeneral Description Trench Power LV MOSFET technology High density cell design for low RDS(ON) High Speed switchingApplications Battery protection

Datasheet: SL4407A , SL4409N , SL4410 , SL4421 , SL4435A , SL4449A , SL4459 , SL4614 , IRF1404 , SL4822A , SL4N150B , SL4N150F , SL4N150K , SL4N150P , SL4N150T , SL50N02D , SL50N06D .

History: CS5N5210 | AUIRFZ48Z | NDT6N65P | STB16NF06L | RSJ400N06 | IRHM7260 | IRF3709ZL

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