SL4813A Datasheet and Replacement
Type Designator: SL4813A
Type of Transistor: MOSFET
Type of Control Channel: P -Channel
Pd ⓘ - Maximum Power Dissipation: 2.5 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 2 V
|Id| ⓘ - Maximum Drain Current: 7.1 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
tr ⓘ - Rise Time: 44 nS
Cossⓘ - Output Capacitance: 178 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.025 Ohm
Package: SOP8
SL4813A substitution
SL4813A Datasheet (PDF)
sl4813a.pdf

SL4813AP-Channel Enhancement Mode Field Effect TransistorProduct Summary V -30VDS ID -7.1A R ( at VGS=-10V)DS(ON)25mohm R ( at VGS=-4.5V)DS(ON) 40mohm 100% V TestedDSGeneral Description Trench Power LV MOSFET technology High density cell design for low RDS(ON) High Speed switchingApplications Battery protection
Datasheet: SL4407A , SL4409N , SL4410 , SL4421 , SL4435A , SL4449A , SL4459 , SL4614 , IRF1404 , SL4822A , SL4N150B , SL4N150F , SL4N150K , SL4N150P , SL4N150T , SL50N02D , SL50N06D .
History: TPCF8104 | 2SK2185 | SSM3K107TU | UTT6NP10G-S08-R | SIA537EDJ | CS5N5210 | QM2N7002E3K1
Keywords - SL4813A MOSFET datasheet
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History: TPCF8104 | 2SK2185 | SSM3K107TU | UTT6NP10G-S08-R | SIA537EDJ | CS5N5210 | QM2N7002E3K1



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