SL4813A MOSFET. Datasheet pdf. Equivalent
Type Designator: SL4813A
Type of Transistor: MOSFET
Type of Control Channel: P -Channel
Pdⓘ - Maximum Power Dissipation: 2.5 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 2 V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 2.5 V
|Id|ⓘ - Maximum Drain Current: 7.1 A
Tjⓘ - Maximum Junction Temperature: 150 °C
Qgⓘ - Total Gate Charge: 28.44 nC
trⓘ - Rise Time: 44 nS
Cossⓘ - Output Capacitance: 178 pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.025 Ohm
Package: SOP8
SL4813A Transistor Equivalent Substitute - MOSFET Cross-Reference Search
SL4813A Datasheet (PDF)
sl4813a.pdf
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SL4813AP-Channel Enhancement Mode Field Effect TransistorProduct Summary V -30VDS ID -7.1A R ( at VGS=-10V)DS(ON)25mohm R ( at VGS=-4.5V)DS(ON) 40mohm 100% V TestedDSGeneral Description Trench Power LV MOSFET technology High density cell design for low RDS(ON) High Speed switchingApplications Battery protection
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