All MOSFET. SL50P06D Datasheet

 

SL50P06D Datasheet and Replacement


   Type Designator: SL50P06D
   Type of Transistor: MOSFET
   Type of Control Channel: P -Channel
   Pd ⓘ - Maximum Power Dissipation: 270 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 60 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 50 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 17 nS
   Cossⓘ - Output Capacitance: 258 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.02 Ohm
   Package: TO252
 

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SL50P06D Datasheet (PDF)

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SL50P06D

SL50P06DP-Channel 60V (D-S) MOSFETDescriptionThis P-Channel MOSFET uses advanced trench technology anddesign to provide excellent R with low gate charge.DS(on)DIt can be used in a wide variety of applications.FeaturesGS1) V =-60V,I =-50A,R

Datasheet: SL4N150B , SL4N150F , SL4N150K , SL4N150P , SL4N150T , SL50N02D , SL50N06D , SL50N06I , IRFP250N , SL5N100 , SL5N100D , SL5N100F , SL5N100K , SL5N100P , SL5N50D , SL607B , SL6244 .

History: STD3LN62K3 | CPH5852

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