SL50P06D Specs and Replacement
Type Designator: SL50P06D
Type of Transistor: MOSFET
Type of Control Channel: P-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 270 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 60 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 50 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Electrical Characteristics
tr ⓘ - Rise Time: 17 nS
Cossⓘ - Output Capacitance: 258 pF
RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.02 Ohm
Package: TO252
SL50P06D substitution
- MOSFET ⓘ Cross-Reference Search
SL50P06D datasheet
sl50p06d.pdf
SL50P06D P-Channel 60V (D-S) MOSFET Description This P-Channel MOSFET uses advanced trench technology and design to provide excellent R with low gate charge. DS(on) D It can be used in a wide variety of applications. Features G S 1) V =-60V,I =-50A,R ... See More ⇒
Detailed specifications: SL4N150B, SL4N150F, SL4N150K, SL4N150P, SL4N150T, SL50N02D, SL50N06D, SL50N06I, IRFB4115, SL5N100, SL5N100D, SL5N100F, SL5N100K, SL5N100P, SL5N50D, SL607B, SL6244
Keywords - SL50P06D MOSFET specs
SL50P06D cross reference
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SL50P06D substitution
SL50P06D replacement
Need a MOSFET replacement? Our guide shows you how to find a perfect substitute by comparing key parameters and specs
History: IPA037N08N3 | SM6028NSKP | 2SK1337
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