SL50P06D Datasheet and Replacement
Type Designator: SL50P06D
Type of Transistor: MOSFET
Type of Control Channel: P -Channel
Pd ⓘ - Maximum Power Dissipation: 270 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 60 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 50 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
tr ⓘ - Rise Time: 17 nS
Cossⓘ - Output Capacitance: 258 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.02 Ohm
Package: TO252
SL50P06D substitution
SL50P06D Datasheet (PDF)
sl50p06d.pdf

SL50P06DP-Channel 60V (D-S) MOSFETDescriptionThis P-Channel MOSFET uses advanced trench technology anddesign to provide excellent R with low gate charge.DS(on)DIt can be used in a wide variety of applications.FeaturesGS1) V =-60V,I =-50A,R
Datasheet: SL4N150B , SL4N150F , SL4N150K , SL4N150P , SL4N150T , SL50N02D , SL50N06D , SL50N06I , IRFP250N , SL5N100 , SL5N100D , SL5N100F , SL5N100K , SL5N100P , SL5N50D , SL607B , SL6244 .
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