All MOSFET. SL50P06D Datasheet

 

SL50P06D MOSFET. Datasheet pdf. Equivalent


   Type Designator: SL50P06D
   Type of Transistor: MOSFET
   Type of Control Channel: P -Channel
   Pdⓘ - Maximum Power Dissipation: 270 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 60 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 2.2 V
   |Id|ⓘ - Maximum Drain Current: 50 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   Qgⓘ - Total Gate Charge: 114 nC
   trⓘ - Rise Time: 17 nS
   Cossⓘ - Output Capacitance: 258 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.02 Ohm
   Package: TO252

 SL50P06D Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

SL50P06D Datasheet (PDF)

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 sl50p06d.pdf

SL50P06D SL50P06D

SL50P06DP-Channel 60V (D-S) MOSFETDescriptionThis P-Channel MOSFET uses advanced trench technology anddesign to provide excellent R with low gate charge.DS(on)DIt can be used in a wide variety of applications.FeaturesGS1) V =-60V,I =-50A,R

Datasheet: IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , 4N60 , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .

 

 
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