All MOSFET. SL5N50D Datasheet

 

SL5N50D Datasheet and Replacement


   Type Designator: SL5N50D
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 98.4 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 500 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 3.5 V
   |Id| ⓘ - Maximum Drain Current: 5 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   Qg ⓘ - Total Gate Charge: 18.5 nC
   tr ⓘ - Rise Time: 49 nS
   Cossⓘ - Output Capacitance: 75 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 1.5 Ohm
   Package: TO252
 

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SL5N50D Datasheet (PDF)

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SL5N50D

SL5N50DN-Channel MOSFETFEATURES R (Max 1.5) @V =10V DS(ON) GS Gate Charge (Typical 18.5nC) Improved dv/dt Capability 100% Avalanche Tested TO-252 MAXIMUM RATING operating temperature range applies unless otherwise specified Symbol Parameter Value Units V Drain-Source voltage(V =0) 500 V DSS GSV Gate -Source voltage 30 V GSS I Drain current (conti

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History: IPP60R1K4C6

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