SL5N50D Specs and Replacement
Type Designator: SL5N50D
Type of Transistor: MOSFET
Type of Control Channel: N-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 98.4 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 500 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
|Id| ⓘ - Maximum Drain Current: 5 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Electrical Characteristics
tr ⓘ - Rise Time: 49 nS
Cossⓘ - Output Capacitance: 75 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 1.5 Ohm
Package: TO252
SL5N50D substitution
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SL5N50D datasheet
sl5n50d.pdf
SL5N50D N-Channel MOSFET FEATURES R (Max 1.5 ) @V =10V DS(ON) GS Gate Charge (Typical 18.5nC) Improved dv/dt Capability 100% Avalanche Tested TO-252 MAXIMUM RATING operating temperature range applies unless otherwise specified Symbol Parameter Value Units V Drain-Source voltage(V =0) 500 V DSS GS V Gate -Source voltage 30 V GSS I Drain current (conti... See More ⇒
Detailed specifications: SL50N06D , SL50N06I , SL50P06D , SL5N100 , SL5N100D , SL5N100F , SL5N100K , SL5N100P , IRF630 , SL607B , SL6244 , SL6800C , SL80N03 , SL8820 , SL8N100 , SL8N100F , SL8N100H .
Keywords - SL5N50D MOSFET specs
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