SL6800C Specs and Replacement
Type Designator: SL6800C
Type of Transistor: MOSFET
Type of Control Channel: N-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 1.1 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 2 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Electrical Characteristics
tr ⓘ - Rise Time: 35 nS
Cossⓘ - Output Capacitance: 22.3 pF
RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.09 Ohm
Package: SOT23-6L
SL6800C substitution
- MOSFET ⓘ Cross-Reference Search
SL6800C datasheet
sl6800c.pdf
SL6800C N-Channel Power Mosfet Product Summary 30 V VDS 90 m RDS(ON)@10V,MAX D2 S1 2 A ID D1 G2 S2 G1 FEATURES Dual N-Channel TrenchFET Power MOSFET Low Gate Charge Low On-resistance Surface Mount Package Absolute Maximum Ratings (TA=25 unless otherwise noted) Symbol Parameter Rating Unit Common Ratings (TC=25 C Unless Otherwise Noted) VGS Gat... See More ⇒
Detailed specifications: SL5N100, SL5N100D, SL5N100F, SL5N100K, SL5N100P, SL5N50D, SL607B, SL6244, 2SK3878, SL80N03, SL8820, SL8N100, SL8N100F, SL8N100H, SL8N100K, SL8N100T, SL90N03R
Keywords - SL6800C MOSFET specs
SL6800C cross reference
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Can't find your MOSFET? Learn how to find a substitute transistor by analyzing voltage, current and package compatibility
History: 4N60G-TF1-T | ELM34801AA
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