All MOSFET. SL6800C Datasheet

 

SL6800C Datasheet and Replacement


   Type Designator: SL6800C
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 1.1 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id|ⓘ - Maximum Drain Current: 2 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   trⓘ - Rise Time: 35 nS
   Cossⓘ - Output Capacitance: 22.3 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.09 Ohm
   Package: SOT23-6L
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SL6800C Datasheet (PDF)

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SL6800C

SL6800CN-Channel Power MosfetProduct Summary30 VVDS90 mRDS(ON)@10V,MAXD2S12 AIDD1G2S2G1FEATURES Dual N-Channel TrenchFET Power MOSFET Low Gate Charge Low On-resistance Surface Mount PackageAbsolute Maximum Ratings (TA=25unless otherwise noted)Symbol Parameter Rating UnitCommon Ratings (TC=25C Unless Otherwise Noted)VGS Gat

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History: SWP069R06VT | HLML6401 | SI3429EDV | IPN60R2K0PFD7S | STD15NF10 | SFP052N80C3 | AP85T03GH-HF

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