SL80N03 Specs and Replacement
Type Designator: SL80N03
Type of Transistor: MOSFET
Type of Control Channel: N-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 83 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 80 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Electrical Characteristics
tr ⓘ - Rise Time: 15 nS
Cossⓘ - Output Capacitance: 250 pF
RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.0065 Ohm
Package: TO252
SL80N03 substitution
- MOSFET ⓘ Cross-Reference Search
SL80N03 datasheet
sl80n03.pdf
SL80N03 N-Channel Enhancement Mode Field Effect Transistor Product Summary V 30V DS I 80A D R ( at V = 10V) 6.5mohm DS(ON) GS R ( at V = 5V) 10mohm DS(ON) GS Features High density cell design for ultra low Rdson Fully characterized avalanche voltage and current Good stability and uniformity with high EAS Excellent package for good heat dissi... See More ⇒
sl80n10.pdf
SL80N10 N-Channel Power MOSFET General Features VDS =100V,ID =80A RDS(ON) ... See More ⇒
Detailed specifications: SL5N100D, SL5N100F, SL5N100K, SL5N100P, SL5N50D, SL607B, SL6244, SL6800C, STP75NF75, SL8820, SL8N100, SL8N100F, SL8N100H, SL8N100K, SL8N100T, SL90N03R, SL90N20P
Keywords - SL80N03 MOSFET specs
SL80N03 cross reference
SL80N03 equivalent finder
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SL80N03 substitution
SL80N03 replacement
Step-by-step guide to finding a MOSFET replacement. Cross-reference parts and ensure compatibility for your repair or project.
History: ELM34608AA | TK4Q60DA
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