SL80N03 MOSFET. Datasheet pdf. Equivalent
Type Designator: SL80N03
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pdⓘ - Maximum Power Dissipation: 83 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 2.5 V
|Id|ⓘ - Maximum Drain Current: 80 A
Tjⓘ - Maximum Junction Temperature: 150 °C
Qgⓘ - Total Gate Charge: 61 nC
trⓘ - Rise Time: 15 nS
Cossⓘ - Output Capacitance: 250 pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.0065 Ohm
Package: TO252
SL80N03 Transistor Equivalent Substitute - MOSFET Cross-Reference Search
SL80N03 Datasheet (PDF)
..1. Size:1465K slkor
sl80n03.pdf
sl80n03.pdf
SL80N03N-Channel Enhancement Mode Field Effect TransistorProduct Summary V 30V DSI 80A DR ( at V = 10V) 6.5mohm DS(ON) GSR ( at V = 5V) 10mohm DS(ON) GSFeatures High density cell design for ultra low Rdson Fully characterized avalanche voltage and current Good stability and uniformity with high EAS Excellent package for good heat dissi
9.1. Size:1443K slkor
sl80n10.pdf
sl80n10.pdf
SL80N10N-Channel Power MOSFET General Features VDS =100V,ID =80ARDS(ON)
Datasheet: IRFP344 , IRFP350 , IRFP350A , IRFP350FI , IRFP350LC , IRFP351 , IRFP352 , IRFP353 , IRF1010E , IRFP360 , IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 .
