All MOSFET. SL80N03 Datasheet

 

SL80N03 MOSFET. Datasheet pdf. Equivalent


   Type Designator: SL80N03
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 83 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 2.5 V
   |Id|ⓘ - Maximum Drain Current: 80 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   Qgⓘ - Total Gate Charge: 61 nC
   trⓘ - Rise Time: 15 nS
   Cossⓘ - Output Capacitance: 250 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.0065 Ohm
   Package: TO252

 SL80N03 Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

SL80N03 Datasheet (PDF)

 ..1. Size:1465K  slkor
 sl80n03.pdf

SL80N03 SL80N03

SL80N03N-Channel Enhancement Mode Field Effect TransistorProduct Summary V 30V DSI 80A DR ( at V = 10V) 6.5mohm DS(ON) GSR ( at V = 5V) 10mohm DS(ON) GSFeatures High density cell design for ultra low Rdson Fully characterized avalanche voltage and current Good stability and uniformity with high EAS Excellent package for good heat dissi

 9.1. Size:1443K  slkor
 sl80n10.pdf

SL80N03 SL80N03

SL80N10N-Channel Power MOSFET General Features VDS =100V,ID =80ARDS(ON)

Datasheet: IRFP344 , IRFP350 , IRFP350A , IRFP350FI , IRFP350LC , IRFP351 , IRFP352 , IRFP353 , 20N50 , IRFP360 , IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 .

 

 
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