SL8N100F Specs and Replacement
Type Designator: SL8N100F
Type of Transistor: MOSFET
Type of Control Channel: N-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 31.7 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 1000 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
|Id| ⓘ - Maximum Drain Current: 8 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Electrical Characteristics
tr ⓘ - Rise Time: 22 nS
Cossⓘ - Output Capacitance: 67 pF
RDSonⓘ - Maximum Drain-Source On-State Resistance: 2.3 Ohm
Package: TO220F
SL8N100F substitution
- MOSFET ⓘ Cross-Reference Search
SL8N100F datasheet
sl8n100 sl8n100h sl8n100k sl8n100f sl8n100t.pdf
SL8N100 Series Features Low gate charge Low C (typ 9pF) rss Fast switchin 100% avalanche tested Improved dv/dt capability RoHS product Applications High frequency switching mode power supply Electronic ballast UPS Absolute Ratings (Tc=25 ) Parameter Symbol Value Unit Drain-Source Voltage V 1000 V DSS 8 A I T=25 D Drain Current-continu... See More ⇒
Detailed specifications: SL5N100P, SL5N50D, SL607B, SL6244, SL6800C, SL80N03, SL8820, SL8N100, IRF4905, SL8N100H, SL8N100K, SL8N100T, SL90N03R, SL90N20P, SL90P03G, SL9435A, SL9926A
Keywords - SL8N100F MOSFET specs
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Can't find your MOSFET? Learn how to find a substitute transistor by analyzing voltage, current and package compatibility
History: SLD8N65SV
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