SL8N100F MOSFET. Datasheet pdf. Equivalent
Type Designator: SL8N100F
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pdⓘ - Maximum Power Dissipation: 31.7 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 1000 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 5 V
|Id|ⓘ - Maximum Drain Current: 8 A
Tjⓘ - Maximum Junction Temperature: 150 °C
Qgⓘ - Total Gate Charge: 14 nC
trⓘ - Rise Time: 22 nS
Cossⓘ - Output Capacitance: 67 pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 2.3 Ohm
Package: TO220F
SL8N100F Transistor Equivalent Substitute - MOSFET Cross-Reference Search
SL8N100F Datasheet (PDF)
sl8n100 sl8n100h sl8n100k sl8n100f sl8n100t.pdf
SL8N100 SeriesFeatures Low gate charge Low C (typ 9pF)rss Fast switchin 100% avalanche tested Improved dv/dt capability RoHS productApplications High frequency switching mode power supply Electronic ballast UPSAbsolute Ratings (Tc=25)Parameter Symbol Value UnitDrain-Source Voltage V 1000 VDSS8 AI T=25DDrain Current-continu
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