SL9N150T Datasheet and Replacement
Type Designator: SL9N150T
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pd ⓘ - Maximum Power Dissipation: 350 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 1500 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
|Id| ⓘ - Maximum Drain Current: 9 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
tr ⓘ - Rise Time: 16 nS
Cossⓘ - Output Capacitance: 300 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 3.5 Ohm
Package: TO247
SL9N150T substitution
SL9N150T Datasheet (PDF)
sl9n150t.pdf

SL9N150TFeatures 100% avalanche tested Avalanche ruggedness Gate charge minimized Very low intrinsic capacitances High speed switching Very low on-resistanceGeneral DescriptionApplications Welder UPS PV Inverter Switching applicationsElectrical ratingsAbsolute maximum ratingsParameter Symbol Value UnitDrain-source voltage (V = 0) V
Datasheet: SL8N100T , SL90N03R , SL90N20P , SL90P03G , SL9435A , SL9926A , SL9945 , SL9968 , 4N60 , SLP170C04D , SLP240C03D , SGB080N055 , SGB100N025 , SGB100N042 , SGL100N025 , SGP080N055 , SGP100N025 .
History: PSMN4R8-100PSE | HSP0048
Keywords - SL9N150T MOSFET datasheet
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History: PSMN4R8-100PSE | HSP0048



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