All MOSFET. SL9N150T Datasheet

 

SL9N150T MOSFET. Datasheet pdf. Equivalent


   Type Designator: SL9N150T
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 350 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 1500 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 5 V
   |Id|ⓘ - Maximum Drain Current: 9 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   Qgⓘ - Total Gate Charge: 85 nC
   trⓘ - Rise Time: 16 nS
   Cossⓘ - Output Capacitance: 300 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 3.5 Ohm
   Package: TO247

 SL9N150T Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

SL9N150T Datasheet (PDF)

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 sl9n150t.pdf

SL9N150T SL9N150T

SL9N150TFeatures 100% avalanche tested Avalanche ruggedness Gate charge minimized Very low intrinsic capacitances High speed switching Very low on-resistanceGeneral DescriptionApplications Welder UPS PV Inverter Switching applicationsElectrical ratingsAbsolute maximum ratingsParameter Symbol Value UnitDrain-source voltage (V = 0) V

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