SGB080N055 Specs and Replacement
Type Designator: SGB080N055
Type of Transistor: MOSFET
Type of Control Channel: N-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 179 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 80 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 120 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Electrical Characteristics
tr ⓘ - Rise Time: 99 nS
Cossⓘ - Output Capacitance: 640 pF
RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.0053 Ohm
Package: TO263
SGB080N055 substitution
- MOSFET ⓘ Cross-Reference Search
SGB080N055 datasheet
sgb080n055 sgp080n055 sgw080n055.pdf
SUPER-SEMI SUPER-MOSFET Super Gate Metal Oxide Semiconductor Field Effect Transistor 80V Super Gate Power MOSFET SG*080N055 Rev. 1.1 Jul. 2021 www.supersemi.com.cn SGB080N055/SGP080N055/SGW080N055 80V N-Channel MOSFET Description Features VDS 80V The SG-MOSFET uses advanced trench MOSFET technology ID (at Vgs=10V) 120A that is uniquely optimized to provide the most effic... See More ⇒
Detailed specifications: SL90P03G, SL9435A, SL9926A, SL9945, SL9968, SL9N150T, SLP170C04D, SLP240C03D, IRFB3607, SGB100N025, SGB100N042, SGL100N025, SGP080N055, SGP100N025, SGP100N042, SGT080N055, SGW080N055
Keywords - SGB080N055 MOSFET specs
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Learn how to find the right MOSFET substitute. A guide to cross-reference, check specs and replace MOSFETs in your circuits.
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