All MOSFET. SGB080N055 Datasheet

 

SGB080N055 Datasheet and Replacement


   Type Designator: SGB080N055
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 179 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 80 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 120 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 99 nS
   Cossⓘ - Output Capacitance: 640 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.0053 Ohm
   Package: TO263
 

 SGB080N055 substitution

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SGB080N055 Datasheet (PDF)

 ..1. Size:918K  cn super semi
 sgb080n055 sgp080n055 sgw080n055.pdf pdf_icon

SGB080N055

SUPER-SEMISUPER-MOSFETSuper Gate Metal Oxide Semiconductor Field Effect Transistor80V Super Gate Power MOSFETSG*080N055Rev. 1.1Jul. 2021www.supersemi.com.cnSGB080N055/SGP080N055/SGW080N05580V N-Channel MOSFETDescription Features VDS 80VThe SG-MOSFET uses advanced trench MOSFET technology ID (at Vgs=10V) 120Athat is uniquely optimized to provide the most effic

Datasheet: SL90P03G , SL9435A , SL9926A , SL9945 , SL9968 , SL9N150T , SLP170C04D , SLP240C03D , AON7506 , SGB100N025 , SGB100N042 , SGL100N025 , SGP080N055 , SGP100N025 , SGP100N042 , SGT080N055 , SGW080N055 .

History: SI4431BDY

Keywords - SGB080N055 MOSFET datasheet

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