SGB080N055 MOSFET. Datasheet pdf. Equivalent
Type Designator: SGB080N055
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pdⓘ - Maximum Power Dissipation: 179 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 80 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4 V
|Id|ⓘ - Maximum Drain Current: 120 A
Tjⓘ - Maximum Junction Temperature: 150 °C
Qgⓘ - Total Gate Charge: 58 nC
trⓘ - Rise Time: 99 nS
Cossⓘ - Output Capacitance: 640 pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.0053 Ohm
Package: TO263
SGB080N055 Transistor Equivalent Substitute - MOSFET Cross-Reference Search
SGB080N055 Datasheet (PDF)
sgb080n055 sgp080n055 sgw080n055.pdf
SUPER-SEMISUPER-MOSFETSuper Gate Metal Oxide Semiconductor Field Effect Transistor80V Super Gate Power MOSFETSG*080N055Rev. 1.1Jul. 2021www.supersemi.com.cnSGB080N055/SGP080N055/SGW080N05580V N-Channel MOSFETDescription Features VDS 80VThe SG-MOSFET uses advanced trench MOSFET technology ID (at Vgs=10V) 120Athat is uniquely optimized to provide the most effic
Datasheet: FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , GMM3x120-0075X2-SMD , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , RFP50N06 , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL , FDMS3610S , GWM100-0085X1-SMD , FDMS3606S , GWM100-01X1-SL .
History: S85N048S
