All MOSFET. SGT080N055 Datasheet

 

SGT080N055 MOSFET. Datasheet pdf. Equivalent


   Type Designator: SGT080N055
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 179 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 80 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4 V
   |Id|ⓘ - Maximum Drain Current: 120 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   Qgⓘ - Total Gate Charge: 58 nC
   trⓘ - Rise Time: 99 nS
   Cossⓘ - Output Capacitance: 640 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.0055 Ohm
   Package: TO252

 SGT080N055 Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

SGT080N055 Datasheet (PDF)

 ..1. Size:759K  cn super semi
 sgt080n055.pdf

SGT080N055 SGT080N055

SUPER-SEMISUPER-MOSFETSuper Gate Metal Oxide Semiconductor Field Effect Transistor80V Super Gate Power MOSFETSGT080N055Rev. 1.0Sep. 2021www.supersemi.com.cnSGT080N05580V N-Channel MOSFETDescription Features VDS 80VThe SG-MOSFET uses advanced trench MOSFET technology ID (at Vgs=10V) 120Athat is uniquely optimized to provide the most efficient high Typ. RD

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