All MOSFET. SGT080N055 Datasheet

 

SGT080N055 Datasheet and Replacement


   Type Designator: SGT080N055
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 179 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 80 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 120 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 99 nS
   Cossⓘ - Output Capacitance: 640 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.0055 Ohm
   Package: TO252
 

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SGT080N055 Datasheet (PDF)

 ..1. Size:759K  cn super semi
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SGT080N055

SUPER-SEMISUPER-MOSFETSuper Gate Metal Oxide Semiconductor Field Effect Transistor80V Super Gate Power MOSFETSGT080N055Rev. 1.0Sep. 2021www.supersemi.com.cnSGT080N05580V N-Channel MOSFETDescription Features VDS 80VThe SG-MOSFET uses advanced trench MOSFET technology ID (at Vgs=10V) 120Athat is uniquely optimized to provide the most efficient high Typ. RD

Datasheet: SLP240C03D , SGB080N055 , SGB100N025 , SGB100N042 , SGL100N025 , SGP080N055 , SGP100N025 , SGP100N042 , IRF1407 , SGW080N055 , SGW100N025 , SSA50R060S , SSA65R190S , SSB20N60S , SSB60R075SFD2 , SSB60R099S2E , SSB60R099SFD .

History: AP4578GH | DH012N03I | APT10090SLL | SFP830 | SWD068R68E7T | WMN25N70EM | KIA3510A-252

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