SGT080N055 PDF and Equivalents Search

 

SGT080N055 Specs and Replacement

Type Designator: SGT080N055

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 179 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 80 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 120 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 99 nS

Cossⓘ - Output Capacitance: 640 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.0055 Ohm

Package: TO252

SGT080N055 substitution

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SGT080N055 datasheet

 ..1. Size:759K  cn super semi
 sgt080n055.pdf pdf_icon

SGT080N055

SUPER-SEMI SUPER-MOSFET Super Gate Metal Oxide Semiconductor Field Effect Transistor 80V Super Gate Power MOSFET SGT080N055 Rev. 1.0 Sep. 2021 www.supersemi.com.cn SGT080N055 80V N-Channel MOSFET Description Features VDS 80V The SG-MOSFET uses advanced trench MOSFET technology ID (at Vgs=10V) 120A that is uniquely optimized to provide the most efficient high Typ. RD... See More ⇒

Detailed specifications: SLP240C03D, SGB080N055, SGB100N025, SGB100N042, SGL100N025, SGP080N055, SGP100N025, SGP100N042, IRFP450, SGW080N055, SGW100N025, SSA50R060S, SSA65R190S, SSB20N60S, SSB60R075SFD2, SSB60R099S2E, SSB60R099SFD

Keywords - SGT080N055 MOSFET specs

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Step-by-step guide to finding a MOSFET replacement. Cross-reference parts and ensure compatibility for your repair or project.

 

 

 

 

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