All MOSFET. SSA65R190S Datasheet

 

SSA65R190S Datasheet and Replacement


   Type Designator: SSA65R190S
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 151 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 650 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Id| ⓘ - Maximum Drain Current: 20 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 11 nS
   Cossⓘ - Output Capacitance: 370 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.19 Ohm
   Package: TO3P
 

 SSA65R190S substitution

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SSA65R190S Datasheet (PDF)

 ..1. Size:1069K  cn super semi
 ssw65r190s ssa65r190s.pdf pdf_icon

SSA65R190S

SUPER-SEMISUPER-MOSFETSuper Junction Metal Oxide Semiconductor Field Effect Transistor650V Super Junction Power TransistorSS*65R190SRev.1.3Oct. 2023www.supersemi.com.cnSSW65R190S/SSA65R190S650V N-Channel MOSFETDescription FeaturesSJ-FET is new generation of high voltage MOSFET family that Multi-Epi process SJ-FETis utilizing an advanced charge balance mechanism for

Datasheet: SGL100N025 , SGP080N055 , SGP100N025 , SGP100N042 , SGT080N055 , SGW080N055 , SGW100N025 , SSA50R060S , 4N60 , SSB20N60S , SSB60R075SFD2 , SSB60R099S2E , SSB60R099SFD , SSB60R105SFD2 , SSB60R140SFD , SSB65R090S2 , SSB65R190S .

History: SSB60R099S2E | NTD5805NT4G

Keywords - SSA65R190S MOSFET datasheet

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