SSA65R190S Specs and Replacement
Type Designator: SSA65R190S
Type of Transistor: MOSFET
Type of Control Channel: N-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 151 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 650 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
|Id| ⓘ - Maximum Drain Current: 20 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Electrical Characteristics
tr ⓘ - Rise Time: 11 nS
Cossⓘ - Output Capacitance: 370 pF
RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.19 Ohm
Package: TO3P
SSA65R190S substitution
- MOSFET ⓘ Cross-Reference Search
SSA65R190S datasheet
ssw65r190s ssa65r190s.pdf
SUPER-SEMI SUPER-MOSFET Super Junction Metal Oxide Semiconductor Field Effect Transistor 650V Super Junction Power Transistor SS*65R190S Rev.1.3 Oct. 2023 www.supersemi.com.cn SSW65R190S/SSA65R190S 650V N-Channel MOSFET Description Features SJ-FET is new generation of high voltage MOSFET family that Multi-Epi process SJ-FET is utilizing an advanced charge balance mechanism for ... See More ⇒
Detailed specifications: SGL100N025, SGP080N055, SGP100N025, SGP100N042, SGT080N055, SGW080N055, SGW100N025, SSA50R060S, 4N60, SSB20N60S, SSB60R075SFD2, SSB60R099S2E, SSB60R099SFD, SSB60R105SFD2, SSB60R140SFD, SSB65R090S2, SSB65R190S
Keywords - SSA65R190S MOSFET specs
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Step-by-step guide to finding a MOSFET replacement. Cross-reference parts and ensure compatibility for your repair or project.
History: AP75T12GI | LSE65R180GT
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