All MOSFET. SSA65R190S Datasheet

 

SSA65R190S MOSFET. Datasheet pdf. Equivalent


   Type Designator: SSA65R190S
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 151 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 650 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4.5 V
   |Id|ⓘ - Maximum Drain Current: 20 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   Qgⓘ - Total Gate Charge: 30 nC
   trⓘ - Rise Time: 11 nS
   Cossⓘ - Output Capacitance: 370 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.19 Ohm
   Package: TO3P

 SSA65R190S Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

SSA65R190S Datasheet (PDF)

 ..1. Size:1069K  cn super semi
 ssw65r190s ssa65r190s.pdf

SSA65R190S SSA65R190S

SUPER-SEMISUPER-MOSFETSuper Junction Metal Oxide Semiconductor Field Effect Transistor650V Super Junction Power TransistorSS*65R190SRev.1.3Oct. 2023www.supersemi.com.cnSSW65R190S/SSA65R190S650V N-Channel MOSFETDescription FeaturesSJ-FET is new generation of high voltage MOSFET family that Multi-Epi process SJ-FETis utilizing an advanced charge balance mechanism for

Datasheet: FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , GMM3x120-0075X2-SMD , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , IRFB3607 , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL , FDMS3610S , GWM100-0085X1-SMD , FDMS3606S , GWM100-01X1-SL .

 

 
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