All MOSFET. SSBG65R075SFD2 Datasheet

 

SSBG65R075SFD2 MOSFET. Datasheet pdf. Equivalent


   Type Designator: SSBG65R075SFD2
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 236 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 650 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 5 V
   |Id|ⓘ - Maximum Drain Current: 41 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   Qgⓘ - Total Gate Charge: 78 nC
   trⓘ - Rise Time: 20 nS
   Cossⓘ - Output Capacitance: 140 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.075 Ohm
   Package: TO263-7L

 SSBG65R075SFD2 Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

SSBG65R075SFD2 Datasheet (PDF)

 ..1. Size:632K  cn super semi
ssbg65r075sfd2.pdf

SSBG65R075SFD2
SSBG65R075SFD2

SUPER-SEMISUPER-MOSFETSuper Junction Metal Oxide Semiconductor Field Effect Transistor650V Super Junction Power MOSFET Gen- With Fast-RecoverySS*65R075SFD2Rev. 1.0Apr. 2023www.supersemi.com.cnSSBG65R075SFD2650V N-Channel Super-Junction MOSFET Gen-With Fast-RecoveryDescription FeaturesSJ-FET is new generation of high voltage MOSFET family that Multi-Epi process

Datasheet: IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , 4N60 , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .

History: PHP119NQ06T

 

 
Back to Top