SSI60R190S2E Datasheet and Replacement
Type Designator: SSI60R190S2E
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pd ⓘ - Maximum Power Dissipation: 145 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 600 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
|Id| ⓘ - Maximum Drain Current: 20 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
tr ⓘ - Rise Time: 8 nS
Cossⓘ - Output Capacitance: 60 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.19 Ohm
Package: TO262
SSI60R190S2E substitution
SSI60R190S2E Datasheet (PDF)
ssi60r190s2e.pdf
SUPER-SEMISUPER-MOSFETSuper Junction Metal Oxide Semiconductor Field Effect Transistor600V Super Junction Power MOSFET Gen-SS*60R190S2ERev. 1.0Aug. 2022www.supersemi.com.cnSSI60R190S2E600V N-Channel Super-Junction MOSFET Gen-Description FeaturesSJ-FET is new generation of high voltage MOSFET family that Multi-Epi process SJ-FETis utilizing an advanced charge b
ssf60r260s2 ssp60r260s2 ssi60r260s2.pdf
SUPER-SEMISUPER-MOSFETSuper Junction Metal Oxide Semiconductor Field Effect Transistor600V Super Junction Power MOSFET Gen-SS*60R260S2Rev. 1.0Jun. 2019www.supersemi.com.cnSSF60R260S2/SSP60R260S2/SSI60R260S2600V N-Channel Super-Junction MOSFET Gen-Description FeaturesSJ-FET is new generation of high voltage MOSFET family that Multi-Epi process SJ-FETis utilizin
Datasheet: SSF80R850S2 , SSF90R1K5S , SSF90R240S2 , SSF90R240SFD , SSF90R260S , SSF90R420S2 , SSF90R650S2 , SSF90R900S2 , IRF4905 , SSI65R190S2 , SSI65R360S2E , SSL60R099SFD , SSL60R190SFD , SSL65R070S2E , SSN60R099SFD , SSN65R065SFD3 , SSN65R190S2 .
History: ST2300SRG | TPC6008-H | WMB014N06HG4 | SSQ6N60 | ST12N10D
Keywords - SSI60R190S2E MOSFET datasheet
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History: ST2300SRG | TPC6008-H | WMB014N06HG4 | SSQ6N60 | ST12N10D
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