SSBG120R080C Datasheet and Replacement
Type Designator: SSBG120R080C
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pd ⓘ - Maximum Power Dissipation: 150 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 1200 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 22 V
|Id| ⓘ - Maximum Drain Current: 30 A
Tj ⓘ - Maximum Junction Temperature: 175 °C
tr ⓘ - Rise Time: 11 nS
Cossⓘ - Output Capacitance: 64 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.104 Ohm
Package: TO263-7L
SSBG120R080C substitution
SSBG120R080C Datasheet (PDF)
ssbg120r080c.pdf
SUPER-SEMISUPER-MOSFETSilicon Carbide Metal Oxide Semiconductor Field Effect Transistor1200V SiC Power MOSFETSSBG120R080CRev. 0.3Apr. 2023www.supersemi.com.cnSSBG120R080C1200V N-Channel SiC Power MOSFETDescription FeaturesSiC Power MOSFET is new generation of high voltage MOSFET family that 175 Max. junction temperatureis utilizing a revolutionary semiconductor m
Datasheet: SSN65R190S2 , SSN65R1K2S2E , SSN65R360S2 , SSP20N60S , SSP50R140SFD , SSP60R070S2E , SSP60R075SFD2 , SSP60R099S2E , STP80NF70 , SSW120R040C , SSW120R080C , SSZ120R040C , SSZ120R080C , SSP60R099SFD , SSP60R105SFD2 , SSP60R130S2 , SSP60R140SFD .
Keywords - SSBG120R080C MOSFET datasheet
SSBG120R080C cross reference
SSBG120R080C equivalent finder
SSBG120R080C lookup
SSBG120R080C substitution
SSBG120R080C replacement
LIST
Last Update
MOSFET: AP20G03GD | AP200N15TLG1 | AP200N15MP | AP200N10MP | AP200N04TLG5 | AP200N04NF | AP1N10I | AP18P20P | AP18N03D | AP180N10MP | AP180N04NF | AP180N03D | AP16P02S | AP16P01BF | AP15P10D | AP15P06DF
Popular searches
a1941 | 2sd424 datasheet | 2sc536 datasheet | bd140 transistor equivalent | tip122 transistor equivalent | irfz44n equivalent | 2n2923 | 2n2102