All MOSFET. SSBG120R080C Datasheet

 

SSBG120R080C Datasheet and Replacement


   Type Designator: SSBG120R080C
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 150 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 1200 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 22 V
   |Id| ⓘ - Maximum Drain Current: 30 A
   Tj ⓘ - Maximum Junction Temperature: 175 °C
   tr ⓘ - Rise Time: 11 nS
   Cossⓘ - Output Capacitance: 64 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.104 Ohm
   Package: TO263-7L
 

 SSBG120R080C substitution

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SSBG120R080C Datasheet (PDF)

 ..1. Size:933K  cn super semi
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SSBG120R080C

SUPER-SEMISUPER-MOSFETSilicon Carbide Metal Oxide Semiconductor Field Effect Transistor1200V SiC Power MOSFETSSBG120R080CRev. 0.3Apr. 2023www.supersemi.com.cnSSBG120R080C1200V N-Channel SiC Power MOSFETDescription FeaturesSiC Power MOSFET is new generation of high voltage MOSFET family that 175 Max. junction temperatureis utilizing a revolutionary semiconductor m

Datasheet: SSN65R190S2 , SSN65R1K2S2E , SSN65R360S2 , SSP20N60S , SSP50R140SFD , SSP60R070S2E , SSP60R075SFD2 , SSP60R099S2E , AO4407 , SSW120R040C , SSW120R080C , SSZ120R040C , SSZ120R080C , SSP60R099SFD , SSP60R105SFD2 , SSP60R130S2 , SSP60R140SFD .

History: HSM0048 | SSP65R190S2R

Keywords - SSBG120R080C MOSFET datasheet

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