SSBG120R080C PDF and Equivalents Search

 

SSBG120R080C Specs and Replacement

Type Designator: SSBG120R080C

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 150 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 1200 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 22 V

|Id| ⓘ - Maximum Drain Current: 30 A

Tj ⓘ - Maximum Junction Temperature: 175 °C

Electrical Characteristics

tr ⓘ - Rise Time: 11 nS

Cossⓘ - Output Capacitance: 64 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.104 Ohm

Package: TO263-7L

SSBG120R080C substitution

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SSBG120R080C datasheet

 ..1. Size:933K  cn super semi
 ssbg120r080c.pdf pdf_icon

SSBG120R080C

SUPER-SEMI SUPER-MOSFET Silicon Carbide Metal Oxide Semiconductor Field Effect Transistor 1200V SiC Power MOSFET SSBG120R080C Rev. 0.3 Apr. 2023 www.supersemi.com.cn SSBG120R080C 1200V N-Channel SiC Power MOSFET Description Features SiC Power MOSFET is new generation of high voltage MOSFET family that 175 Max. junction temperature is utilizing a revolutionary semiconductor m... See More ⇒

Detailed specifications: SSN65R190S2, SSN65R1K2S2E, SSN65R360S2, SSP20N60S, SSP50R140SFD, SSP60R070S2E, SSP60R075SFD2, SSP60R099S2E, IRF530, SSW120R040C, SSW120R080C, SSZ120R040C, SSZ120R080C, SSP60R099SFD, SSP60R105SFD2, SSP60R130S2, SSP60R140SFD

Keywords - SSBG120R080C MOSFET specs

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