All MOSFET. SSW120R080C Datasheet

 

SSW120R080C Datasheet and Replacement


   Type Designator: SSW120R080C
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 150 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 1200 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 22 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4.5 V
   |Id| ⓘ - Maximum Drain Current: 30 A
   Tj ⓘ - Maximum Junction Temperature: 175 °C
   Qg ⓘ - Total Gate Charge: 50 nC
   tr ⓘ - Rise Time: 28 nS
   Cossⓘ - Output Capacitance: 64 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.104 Ohm
   Package: TO247
 

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SSW120R080C Datasheet (PDF)

 ..1. Size:979K  cn super semi
 ssw120r080c.pdf pdf_icon

SSW120R080C

SUPER-SEMISUPER-MOSFETSilicon Carbide Metal Oxide Semiconductor Field Effect Transistor1200V SiC Power MOSFETSSW120R080CRev. 0.3Apr. 2023www.supersemi.com.cnSSW120R080C1200V N-Channel SiC Power MOSFETDescription FeaturesSiC Power MOSFET is new generation of high voltage MOSFET family that 175 Max. junction temperatureis utilizing a revolutionary semiconductor mat

 6.1. Size:818K  cn super semi
 ssw120r040c.pdf pdf_icon

SSW120R080C

SUPER-SEMISUPER-MOSFETSilicon Carbide Metal Oxide Semiconductor Field Effect Transistor1200V SiC Power MOSFETSSW120R040CRev. 0.3Nov. 2022www.supersemi.com.cnSSW120R040C1200V N-Channel SiC Power MOSFETDescription FeaturesSiC Power MOSFET is new generation of high voltage MOSFET family that 175 Max. junction temperatureis utilizing a revolutionary semiconductor mat

Datasheet: SSN65R360S2 , SSP20N60S , SSP50R140SFD , SSP60R070S2E , SSP60R075SFD2 , SSP60R099S2E , SSBG120R080C , SSW120R040C , IRFP450 , SSZ120R040C , SSZ120R080C , SSP60R099SFD , SSP60R105SFD2 , SSP60R130S2 , SSP60R140SFD , SSP60R190S2E , SSP60R190SFD2 .

History: TJ100F04M3L

Keywords - SSW120R080C MOSFET datasheet

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