SSW120R080C MOSFET. Datasheet pdf. Equivalent
Type Designator: SSW120R080C
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pdⓘ - Maximum Power Dissipation: 150 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 1200 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 22 V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4.5 V
|Id|ⓘ - Maximum Drain Current: 30 A
Tjⓘ - Maximum Junction Temperature: 175 °C
Qgⓘ - Total Gate Charge: 50 nC
trⓘ - Rise Time: 28 nS
Cossⓘ - Output Capacitance: 64 pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.104 Ohm
Package: TO247
SSW120R080C Transistor Equivalent Substitute - MOSFET Cross-Reference Search
SSW120R080C Datasheet (PDF)
ssw120r080c.pdf
SUPER-SEMISUPER-MOSFETSilicon Carbide Metal Oxide Semiconductor Field Effect Transistor1200V SiC Power MOSFETSSW120R080CRev. 0.3Apr. 2023www.supersemi.com.cnSSW120R080C1200V N-Channel SiC Power MOSFETDescription FeaturesSiC Power MOSFET is new generation of high voltage MOSFET family that 175 Max. junction temperatureis utilizing a revolutionary semiconductor mat
ssw120r040c.pdf
SUPER-SEMISUPER-MOSFETSilicon Carbide Metal Oxide Semiconductor Field Effect Transistor1200V SiC Power MOSFETSSW120R040CRev. 0.3Nov. 2022www.supersemi.com.cnSSW120R040C1200V N-Channel SiC Power MOSFETDescription FeaturesSiC Power MOSFET is new generation of high voltage MOSFET family that 175 Max. junction temperatureis utilizing a revolutionary semiconductor mat
Datasheet: FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , GMM3x120-0075X2-SMD , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , RFP50N06 , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL , FDMS3610S , GWM100-0085X1-SMD , FDMS3606S , GWM100-01X1-SL .
