All MOSFET. SSZ120R080C Datasheet

 

SSZ120R080C Datasheet and Replacement


   Type Designator: SSZ120R080C
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 150 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 1200 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 22 V
   |Id|ⓘ - Maximum Drain Current: 30 A
   Tjⓘ - Maximum Junction Temperature: 175 °C
   trⓘ - Rise Time: 11 nS
   Cossⓘ - Output Capacitance: 64 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.104 Ohm
   Package: TO247-4L
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SSZ120R080C Datasheet (PDF)

 ..1. Size:985K  cn super semi
 ssz120r080c.pdf pdf_icon

SSZ120R080C

SUPER-SEMISUPER-MOSFETSilicon Carbide Metal Oxide Semiconductor Field Effect Transistor1200V SiC Power MOSFETSSZ120R080CRev. 0.3Apr. 2023www.supersemi.com.cnSSZ120R080C1200V N-Channel SiC Power MOSFETDescription FeaturesSiC Power MOSFET is new generation of high voltage MOSFET family that 175 Max. junction temperatureis utilizing a revolutionary semiconductor mat

 6.1. Size:805K  cn super semi
 ssz120r040c.pdf pdf_icon

SSZ120R080C

SUPER-SEMISUPER-MOSFETSilicon Carbide Metal Oxide Semiconductor Field Effect Transistor1200V SiC Power MOSFETSSZ120R040CRev. 0.3Nov. 2022www.supersemi.com.cnSSZ120R040C1200V N-Channel SiC Power MOSFETDescription FeaturesSiC Power MOSFET is new generation of high voltage MOSFET family that 175 Max. junction temperatureis utilizing a revolutionary semiconductor mat

Datasheet: FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , GMM3x120-0075X2-SMD , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , CS150N03A8 , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL , FDMS3610S , GWM100-0085X1-SMD , FDMS3606S , GWM100-01X1-SL .

History: 2SK3700 | IPB22N03S4L-15 | LSC65R280HT

Keywords - SSZ120R080C MOSFET datasheet

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