All MOSFET. STB434S Datasheet

 

STB434S Datasheet and Replacement


   Type Designator: STB434S
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 62.5 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 40 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 60 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 24 nS
   Cossⓘ - Output Capacitance: 211 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.0092 Ohm
   Package: TO263
 

 STB434S substitution

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STB434S Datasheet (PDF)

 ..1. Size:252K  samhop
stb434s stp434s.pdf pdf_icon

STB434S

GreenProductSTB/P434SaS mHop Microelectronics C orp.Ver 1.0N-Channel Logic Level Enhancement Mode Field Effect TransistorFEATURESPRODUCT SUMMARYSuper high dense cell design for low RDS(ON).RDS(ON) (m) MaxVDSS IDRugged and reliable.9.2 @ VGS=10VTO-220 and TO-263 Package.60A40V11.5 @ VGS=4.5VDGSTB SERIESSTP SERIESTO-263(DD-PAK)TO-220S(TA=25C

 9.1. Size:237K  samhop
stb432s stp432s.pdf pdf_icon

STB434S

STB/P432SaS mHop Microelectronics C orp.Ver 1.0N-Channel Logic Enhancement Mode Field Effect TransistorFEATURESPRODUCT SUMMARYSuper high dense cell design for extremely low RDS(ON).RDS(ON) (m) MaxVDSS IDHigh power and current handling capability.9 @ VGS=10VTO-220 & TO-263 package.40V 60A11 @ VGS=4.5VS TB S E R IE S S TP S E R IE STO-263(DD-PAK) TO-220(TC=25

 9.2. Size:256K  samhop
stb438a stp438a.pdf pdf_icon

STB434S

GreenProductSTB/P438AaS mHop Microelectronics C orp.Ver 1.0N-Channel Logic Level Enhancement Mode Field Effect TransistorFEATURESPRODUCT SUMMARYSuper high dense cell design for extremely low RDS(ON).RDS(ON) (m) MaxVDSS IDHigh power and current handling capability.8.5 @ VGS=10VTO-220 & TO-263 package.40V 60A11 @ VGS=4.5VS TB S E R IE S S TP S E R IE STO-263

 9.3. Size:262K  samhop
stb438s stp438s.pdf pdf_icon

STB434S

GreenProductSTB/P438SaS mHop Microelectronics C orp.Ver1.0N-Channel Logic Level Enhancement Mode Field Effect TransistorFEATURESPRODUCT SUMMARYSuper high dense cell design for extremely low RDS(ON).RDS(ON) (m) MaxVDSS IDHigh power and current handling capability.9 @ VGS=10VTO-220 & TO-263 package.40V 60A10 @ VGS=4.5VS TB S E R IE S S TP S E R IE STO-263(DD

Datasheet: FDS4559 , STB438S , FDS4559F085 , STB438A , FDS4672A , FDS4675F085 , FDS4685 , FDS4897AC , IRFZ48N , FDS4897C , STB432S , FDS4935A , FDS4935BZ , FDS5351 , FDS5670 , FDS5672 , FDS6294 .

History: FDS9412 | SIHU6N62E | SPP100N08S2-07 | IXFT26N60Q | 2SJ648

Keywords - STB434S MOSFET datasheet

 STB434S cross reference
 STB434S equivalent finder
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