FDS4935BZ MOSFET Datasheet: P-Ch, 30V, 6.9A. Full specification with pinout and replacement list

FDS4935BZ Specs and Replacement

   Type Designator: FDS4935BZ
   Type of Transistor: MOSFET
   Type of Control Channel: P -Channel

Absolute Maximum Ratings

   Pd ⓘ - Maximum Power Dissipation: 1.6 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 25 V
   |Id| ⓘ - Maximum Drain Current: 6.9 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

   tr ⓘ - Rise Time: 13 nS
   Cossⓘ - Output Capacitance: 240 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.022 Ohm
   Package: SO-8

FDS4935BZ substitution

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FDS4935BZ datasheet

..1. Size:158K fairchild semi
fds4935bz.pdf pdf_icon

September 2006 tm FDS4935BZ Dual 30 Volt P-Channel PowerTrench MOSFET General Description Features This P-Channel MOSFET has been designed 6.9 A, 30 V. RDS(ON) = 22 m @ VGS = 10 V specifically to improve the overall efficiency of DC/DC RDS(ON) = 35 m @ VGS = 4.5 V converters using either synchronous or conventional switching PWM controllers, and battery... See More ⇒

..2. Size:154K onsemi
fds4935bz.pdf pdf_icon

0.1. Size:850K cn vbsemi
fds4935bz-nl-38.pdf pdf_icon

FDS4935BZ-NL&-38 www.VBsemi.tw Dual P-Channel 30-V (D-S) MOSFET FEATURES PRODUCT SUMMARY Halogen-free VDS (V) RDS(on) ( ) ID (A)d, e Qg (Typ.) TrenchFET Power MOSFET 0.029 at VGS = - 10 V - 7.3 100 % UIS Tested RoHS - 30 17 nC COMPLIANT 0.039 at VGS = - 4.5 V - 6.3 APPLICATIONS Load Switches S1 S2 SO-8 S1 1 D1 8 G1 G2 G1 2 D1 7 S2 3 D2 6 G2 4 D2 5 ... See More ⇒

7.1. Size:113K fairchild semi
fds4935a.pdf pdf_icon

March 2002 FDS4935A Dual 30V P-Channel PowerTrench MOSFET General Description Features This P-Channel MOSFET is a rugged gate version of 7 A, 30 V RDS(ON) = 23 m @ VGS = 10 V Fairchild Semiconductor s advanced PowerTrench RDS(ON) = 35 m @ VGS = 4.5 V process. It has been optimized for power management applications requiring a wide ran... See More ⇒