FDS4935BZ Datasheet. Specs and Replacement

Type Designator: FDS4935BZ  📄📄 

Type of Transistor: MOSFET

Type of Control Channel: P-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 1.6 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 25 V

|Id| ⓘ - Maximum Drain Current: 6.9 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 13 nS

Cossⓘ - Output Capacitance: 240 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.022 Ohm

Package: SO-8

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FDS4935BZ datasheet

 ..1. Size:158K  fairchild semi
 fds4935bz.pdf pdf_icon

FDS4935BZ

September 2006 tm FDS4935BZ Dual 30 Volt P-Channel PowerTrench MOSFET General Description Features This P-Channel MOSFET has been designed 6.9 A, 30 V. RDS(ON) = 22 m @ VGS = 10 V specifically to improve the overall efficiency of DC/DC RDS(ON) = 35 m @ VGS = 4.5 V converters using either synchronous or conventional switching PWM controllers, and battery... See More ⇒

 ..2. Size:154K  onsemi
 fds4935bz.pdf pdf_icon

FDS4935BZ

September 2006 tm FDS4935BZ Dual 30 Volt P-Channel PowerTrench MOSFET General Description Features This P-Channel MOSFET has been designed 6.9 A, 30 V. RDS(ON) = 22 m @ VGS = 10 V specifically to improve the overall efficiency of DC/DC RDS(ON) = 35 m @ VGS = 4.5 V converters using either synchronous or conventional switching PWM controllers, and battery... See More ⇒

 0.1. Size:850K  cn vbsemi
 fds4935bz-nl-38.pdf pdf_icon

FDS4935BZ

FDS4935BZ-NL&-38 www.VBsemi.tw Dual P-Channel 30-V (D-S) MOSFET FEATURES PRODUCT SUMMARY Halogen-free VDS (V) RDS(on) ( ) ID (A)d, e Qg (Typ.) TrenchFET Power MOSFET 0.029 at VGS = - 10 V - 7.3 100 % UIS Tested RoHS - 30 17 nC COMPLIANT 0.039 at VGS = - 4.5 V - 6.3 APPLICATIONS Load Switches S1 S2 SO-8 S1 1 D1 8 G1 G2 G1 2 D1 7 S2 3 D2 6 G2 4 D2 5 ... See More ⇒

 7.1. Size:113K  fairchild semi
 fds4935a.pdf pdf_icon

FDS4935BZ

March 2002 FDS4935A Dual 30V P-Channel PowerTrench MOSFET General Description Features This P-Channel MOSFET is a rugged gate version of 7 A, 30 V RDS(ON) = 23 m @ VGS = 10 V Fairchild Semiconductor s advanced PowerTrench RDS(ON) = 35 m @ VGS = 4.5 V process. It has been optimized for power management applications requiring a wide ran... See More ⇒

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Detailed specifications: FDS4672A, FDS4675F085, FDS4685, FDS4897AC, STB434S, FDS4897C, STB432S, FDS4935A, AO4468, FDS5351, FDS5670, FDS5672, FDS6294, STB416D, FDS6298, STB31L01, FDS6574A

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