FDS5351 Datasheet. Specs and Replacement

Type Designator: FDS5351  📄📄 

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 5 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 60 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 6.1 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 3 nS

Cossⓘ - Output Capacitance: 90 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.035 Ohm

Package: SO-8

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FDS5351 datasheet

 ..1. Size:237K  fairchild semi
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FDS5351

April 2008 FDS5351 N-Channel PowerTrench MOSFET 60V, 6.1A, 35m Features General Description Max rDS(on) = 35m at VGS = 10V, ID = 6.1A This N-Channel MOSFET is produced using Fairchild Semiconductor s advanced Power Trench process that has Max rDS(on) = 42m at VGS = 4.5V, ID = 5.5A been especially tailored to minimize the on-state resistance and High performance tr... See More ⇒

Detailed specifications: FDS4675F085, FDS4685, FDS4897AC, STB434S, FDS4897C, STB432S, FDS4935A, FDS4935BZ, FTP08N06A, FDS5670, FDS5672, FDS6294, STB416D, FDS6298, STB31L01, FDS6574A, FDS6670AS

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