FDS5351 MOSFET Datasheet: N-Ch, 60V, 6.1A. Full specification with pinout and replacement list

FDS5351 Specs and Replacement

   Type Designator: FDS5351
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel

Absolute Maximum Ratings

   Pd ⓘ - Maximum Power Dissipation: 5 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 60 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 6.1 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

   tr ⓘ - Rise Time: 3 nS
   Cossⓘ - Output Capacitance: 90 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.035 Ohm
   Package: SO-8

FDS5351 substitution

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FDS5351 datasheet

..1. Size:237K fairchild semi
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April 2008 FDS5351 N-Channel PowerTrench MOSFET 60V, 6.1A, 35m Features General Description Max rDS(on) = 35m at VGS = 10V, ID = 6.1A This N-Channel MOSFET is produced using Fairchild Semiconductor s advanced Power Trench process that has Max rDS(on) = 42m at VGS = 4.5V, ID = 5.5A been especially tailored to minimize the on-state resistance and High performance tr... See More ⇒

Detailed specifications: FDS4675F085 , FDS4685 , FDS4897AC , STB434S , FDS4897C , STB432S , FDS4935A , FDS4935BZ , IRF830 , FDS5670 , FDS5672 , FDS6294 , STB416D , FDS6298 , STB31L01 , FDS6574A , FDS6670AS .