All MOSFET. FDS5351 Datasheet

 

FDS5351 Datasheet and Replacement


   Type Designator: FDS5351
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 5 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 60 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 3 V
   |Id| ⓘ - Maximum Drain Current: 6.1 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   Qg ⓘ - Total Gate Charge: 19 nC
   tr ⓘ - Rise Time: 3 nS
   Cossⓘ - Output Capacitance: 90 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.035 Ohm
   Package: SO-8
 

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FDS5351 Datasheet (PDF)

 ..1. Size:237K  fairchild semi
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FDS5351

April 2008FDS5351N-Channel PowerTrench MOSFET 60V, 6.1A, 35mFeatures General Description Max rDS(on) = 35m at VGS = 10V, ID = 6.1A This N-Channel MOSFET is produced using Fairchild Semiconductors advanced Power Trench process that has Max rDS(on) = 42m at VGS = 4.5V, ID = 5.5Abeen especially tailored to minimize the on-state resistance and High performance tr

Datasheet: FDS4675F085 , FDS4685 , FDS4897AC , STB434S , FDS4897C , STB432S , FDS4935A , FDS4935BZ , IRFZ48N , FDS5670 , FDS5672 , FDS6294 , STB416D , FDS6298 , STB31L01 , FDS6574A , FDS6670AS .

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