SSW85R105SFD Specs and Replacement
Type Designator: SSW85R105SFD
Type of Transistor: MOSFET
Type of Control Channel: N-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 470 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 850 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
|Id| ⓘ - Maximum Drain Current: 50 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Electrical Characteristics
tr ⓘ - Rise Time: 30 nS
Cossⓘ - Output Capacitance: 194 pF
RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.105 Ohm
Package: TO247
SSW85R105SFD substitution
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SSW85R105SFD datasheet
ssw85r105sfd.pdf
SUPER-SEMI SUPER-MOSFET Super Junction Metal Oxide Semiconductor Field Effect Transistor 850V Super Junction Power MOSFET Gen- With Fast-Recovery SS*85R105SFD Rev. 1.1 Apr. 2023 www.supersemi.com.cn SSW85R105SFD 850V N-Channel Super-Junction MOSFET Gen- With Fast-Recovery Description Features SJ-FET is new generation of high voltage MOSFET family that Multi-Epi process SJ... See More ⇒
Detailed specifications: SSW65R190SFD, SSW80R130S, SSW80R160S2, SSW80R160SFD, SSW80R180S2, SSW80R240S2, SSW80R240SFD, SSW80R380S2, 2SK3568, SSW90R130S, SSW90R160S2, SSW90R160SFD, SSW90R240S2, SSW90R420S2, SSZ65R022SFD3, SSZ65R041SFD2, SWB015R03VLT
Keywords - SSW85R105SFD MOSFET specs
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