SSW85R105SFD MOSFET. Datasheet pdf. Equivalent
Type Designator: SSW85R105SFD
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pdⓘ - Maximum Power Dissipation: 470 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 850 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 5 V
|Id|ⓘ - Maximum Drain Current: 50 A
Tjⓘ - Maximum Junction Temperature: 150 °C
Qgⓘ - Total Gate Charge: 95 nC
trⓘ - Rise Time: 30 nS
Cossⓘ - Output Capacitance: 194 pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.105 Ohm
Package: TO247
SSW85R105SFD Transistor Equivalent Substitute - MOSFET Cross-Reference Search
SSW85R105SFD Datasheet (PDF)
..1. Size:884K cn super semi
ssw85r105sfd.pdf
ssw85r105sfd.pdf
SUPER-SEMISUPER-MOSFETSuper Junction Metal Oxide Semiconductor Field Effect Transistor850V Super Junction Power MOSFET Gen- With Fast-RecoverySS*85R105SFDRev. 1.1Apr. 2023www.supersemi.com.cnSSW85R105SFD850V N-Channel Super-Junction MOSFET Gen-With Fast-RecoveryDescription FeaturesSJ-FET is new generation of high voltage MOSFET family that Multi-Epi process SJ
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