SSW85R105SFD Datasheet and Replacement
Type Designator: SSW85R105SFD
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pd ⓘ - Maximum Power Dissipation: 470 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 850 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
|Id| ⓘ - Maximum Drain Current: 50 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
tr ⓘ - Rise Time: 30 nS
Cossⓘ - Output Capacitance: 194 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.105 Ohm
Package: TO247
SSW85R105SFD substitution
SSW85R105SFD Datasheet (PDF)
ssw85r105sfd.pdf

SUPER-SEMISUPER-MOSFETSuper Junction Metal Oxide Semiconductor Field Effect Transistor850V Super Junction Power MOSFET Gen- With Fast-RecoverySS*85R105SFDRev. 1.1Apr. 2023www.supersemi.com.cnSSW85R105SFD850V N-Channel Super-Junction MOSFET Gen-With Fast-RecoveryDescription FeaturesSJ-FET is new generation of high voltage MOSFET family that Multi-Epi process SJ
Datasheet: SSW65R190SFD , SSW80R130S , SSW80R160S2 , SSW80R160SFD , SSW80R180S2 , SSW80R240S2 , SSW80R240SFD , SSW80R380S2 , 5N65 , SSW90R130S , SSW90R160S2 , SSW90R160SFD , SSW90R240S2 , SSW90R420S2 , SSZ65R022SFD3 , SSZ65R041SFD2 , SWB015R03VLT .
History: IRF2805L
Keywords - SSW85R105SFD MOSFET datasheet
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History: IRF2805L



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