All MOSFET. SSW85R105SFD Datasheet

 

SSW85R105SFD Datasheet and Replacement


   Type Designator: SSW85R105SFD
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 470 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 850 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Id| ⓘ - Maximum Drain Current: 50 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 30 nS
   Cossⓘ - Output Capacitance: 194 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.105 Ohm
   Package: TO247
 

 SSW85R105SFD substitution

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SSW85R105SFD Datasheet (PDF)

 ..1. Size:884K  cn super semi
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SSW85R105SFD

SUPER-SEMISUPER-MOSFETSuper Junction Metal Oxide Semiconductor Field Effect Transistor850V Super Junction Power MOSFET Gen- With Fast-RecoverySS*85R105SFDRev. 1.1Apr. 2023www.supersemi.com.cnSSW85R105SFD850V N-Channel Super-Junction MOSFET Gen-With Fast-RecoveryDescription FeaturesSJ-FET is new generation of high voltage MOSFET family that Multi-Epi process SJ

Datasheet: SSW65R190SFD , SSW80R130S , SSW80R160S2 , SSW80R160SFD , SSW80R180S2 , SSW80R240S2 , SSW80R240SFD , SSW80R380S2 , 5N65 , SSW90R130S , SSW90R160S2 , SSW90R160SFD , SSW90R240S2 , SSW90R420S2 , SSZ65R022SFD3 , SSZ65R041SFD2 , SWB015R03VLT .

History: AFN3302W | ELM36402EA | CEP6036 | HUFA76419S3S | SSW80R380S2 | IRL3714S | FQAF12N60

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