All MOSFET. SWB015R03VLT Datasheet

 

SWB015R03VLT Datasheet and Replacement


   Type Designator: SWB015R03VLT
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 298 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 250 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 77 nS
   Cossⓘ - Output Capacitance: 1440 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.0017 Ohm
   Package: TO263
 

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SWB015R03VLT Datasheet (PDF)

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SWB015R03VLT

SW015R03VLTN-channel Enhanced mode TO-263 MOSFETFeaturesTO-263BVDSS : 30V High ruggednessID : 250A Low RDS(ON) (Typ 1.5m)@VGS=4.5V(Typ 1.2m)@VGS=10VRDS(ON) : 1.5m@VGS=4.5V Low Gate Charge (Typ 315nC)1.2m@VGS=10V Improved dv/dt Capability 1 100% Avalanche Tested232 Application:Synchronous Rectification,Li Battery Protect Board,

Datasheet: SSW85R105SFD , SSW90R130S , SSW90R160S2 , SSW90R160SFD , SSW90R240S2 , SSW90R420S2 , SSZ65R022SFD3 , SSZ65R041SFD2 , CS150N03A8 , SWB020R03VLT , SWB030R04VT , SWB031R06ET , SWB036R10E8S , SWB042R10ES , SWB046R08E8T , SWB046R08E9T , SWB046R68E8T .

History: APT4014SVFRG | P3606BEA | APM2054NDC | UPA1913 | HP120N04 | LNC08R085 | SVS7N60DD2TR

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