SWB015R03VLT MOSFET. Datasheet pdf. Equivalent
Type Designator: SWB015R03VLT
Marking Code: SW015R03VLT
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pdⓘ - Maximum Power Dissipation: 298 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 2.4 V
|Id|ⓘ - Maximum Drain Current: 250 A
Tjⓘ - Maximum Junction Temperature: 150 °C
Qgⓘ - Total Gate Charge: 315 nC
trⓘ - Rise Time: 77 nS
Cossⓘ - Output Capacitance: 1440 pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.0017 Ohm
Package: TO263
SWB015R03VLT Transistor Equivalent Substitute - MOSFET Cross-Reference Search
SWB015R03VLT Datasheet (PDF)
..1. Size:795K samwin
swb015r03vlt.pdf
swb015r03vlt.pdf
SW015R03VLTN-channel Enhanced mode TO-263 MOSFETFeaturesTO-263BVDSS : 30V High ruggednessID : 250A Low RDS(ON) (Typ 1.5m)@VGS=4.5V(Typ 1.2m)@VGS=10VRDS(ON) : 1.5m@VGS=4.5V Low Gate Charge (Typ 315nC)1.2m@VGS=10V Improved dv/dt Capability 1 100% Avalanche Tested232 Application:Synchronous Rectification,Li Battery Protect Board,
Datasheet: IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , MMIS60R580P , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .
