All MOSFET. SWB020R03VLT Datasheet

 

SWB020R03VLT Datasheet and Replacement


   Type Designator: SWB020R03VLT
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 192.3 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 180 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 64 nS
   Cossⓘ - Output Capacitance: 1018 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.003 Ohm
   Package: TO263
 

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SWB020R03VLT Datasheet (PDF)

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SWB020R03VLT

SW020R03VLTN-channel Enhanced mode TO-220/TO-263 MOSFETFeaturesTO-263TO-220BVDSS : 30V High ruggednessID : 180A Low RDS(ON) (Typ 3.6m)@VGS=4.5V(Typ 2.1m)@VGS=10V RDS(ON) : 3.6m@VGS=4.5V Low Gate Charge (Typ 140nC)2.1m@VGS=10V Improved dv/dt Capability 112 100% Avalanche Tested 2233 Application:Synchronous Rectification,Li B

Datasheet: SSW90R130S , SSW90R160S2 , SSW90R160SFD , SSW90R240S2 , SSW90R420S2 , SSZ65R022SFD3 , SSZ65R041SFD2 , SWB015R03VLT , IRF2807 , SWB030R04VT , SWB031R06ET , SWB036R10E8S , SWB042R10ES , SWB046R08E8T , SWB046R08E9T , SWB046R68E8T , SWB050R95E8S .

History: SI2101 | BUZ384 | 2SJ669

Keywords - SWB020R03VLT MOSFET datasheet

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