STB416D MOSFET. Datasheet pdf. Equivalent
Type Designator: STB416D
Type of Transistor: MOSFET
Type of Control Channel: NP -Channel
Maximum Power Dissipation (Pd): 15.6 W
Maximum Drain-Source Voltage |Vds|: 40 V
Maximum Gate-Source Voltage |Vgs|: 20 V
Maximum Gate-Threshold Voltage |Vgs(th)|: 3 V
Maximum Drain Current |Id|: 18 A
Maximum Junction Temperature (Tj): 150 °C
Total Gate Charge (Qg): 11.5 nC
Rise Time (tr): 12.2 nS
Drain-Source Capacitance (Cd): 78 pF
Maximum Drain-Source On-State Resistance (Rds): 0.028 Ohm
Package: TO263-5L
STB416D Transistor Equivalent Substitute - MOSFET Cross-Reference Search
STB416D Datasheet (PDF)
..1. Size:268K samhop
stb416d.pdf
stb416d.pdf
GreenProductSTB416DaS mHop Microelectronics C orp.Ver 1.0Dual Enhancement Mode Field Effect Transistor (N and P Channel)PRODUCT SUMMARY (N-Channel) PRODUCT SUMMARY (P-Channel)RDS(ON) (m) Max RDS(ON) (m) MaxVDSS ID VDSS ID28 @ VGS=10V 36 @ VGS=-10V40V 18A -40V -16A43 @ VGS=4.5V 61 @ VGS=-4.5VD1 D2D1/D2G 1G 2S1G1D1/D2S2G2S 1 N-ch S 2 P-chSTB SER
Datasheet: IRFP344 , IRFP350 , IRFP350A , IRFP350FI , IRFP350LC , IRFP351 , IRFP352 , IRFP353 , IRF1010E , IRFP360 , IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 .
