All MOSFET. STB416D Datasheet

 

STB416D Datasheet and Replacement


   Type Designator: STB416D
   Type of Transistor: MOSFET
   Type of Control Channel: NP -Channel
   Pdⓘ - Maximum Power Dissipation: 15.6 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 40 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id|ⓘ - Maximum Drain Current: 18 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   trⓘ - Rise Time: 12.2 nS
   Cossⓘ - Output Capacitance: 78 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.028 Ohm
   Package: TO263-5L
      - MOSFET Cross-Reference Search

 

STB416D Datasheet (PDF)

 ..1. Size:268K  samhop
 stb416d.pdf pdf_icon

STB416D

GreenProductSTB416DaS mHop Microelectronics C orp.Ver 1.0Dual Enhancement Mode Field Effect Transistor (N and P Channel)PRODUCT SUMMARY (N-Channel) PRODUCT SUMMARY (P-Channel)RDS(ON) (m) Max RDS(ON) (m) MaxVDSS ID VDSS ID28 @ VGS=10V 36 @ VGS=-10V40V 18A -40V -16A43 @ VGS=4.5V 61 @ VGS=-4.5VD1 D2D1/D2G 1G 2S1G1D1/D2S2G2S 1 N-ch S 2 P-chSTB SER

Datasheet: IRFP344 , IRFP350 , IRFP350A , IRFP350FI , IRFP350LC , IRFP351 , IRFP352 , IRFP353 , 2SK3568 , IRFP360 , IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 .

History: VB1240 | SRT10N160LD | APT10021JFLL | SM4186T9RL | BUK6218-40C | NP180N04TUJ | SSW65R190S2

Keywords - STB416D MOSFET datasheet

 STB416D cross reference
 STB416D equivalent finder
 STB416D lookup
 STB416D substitution
 STB416D replacement

 

 
Back to Top

 


 
.