STB416D Specs and Replacement

Type Designator: STB416D

Type of Transistor: MOSFET

Type of Control Channel: NP-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 15.6 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 40 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 18 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 12.2 nS

Cossⓘ - Output Capacitance: 78 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.028 Ohm

Package: TO263-5L

STB416D substitution

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STB416D datasheet

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STB416D

Green Product STB416D a S mHop Microelectronics C orp. Ver 1.0 Dual Enhancement Mode Field Effect Transistor (N and P Channel) PRODUCT SUMMARY (N-Channel) PRODUCT SUMMARY (P-Channel) RDS(ON) (m ) Max RDS(ON) (m ) Max VDSS ID VDSS ID 28 @ VGS=10V 36 @ VGS=-10V 40V 18A -40V -16A 43 @ VGS=4.5V 61 @ VGS=-4.5V D1 D2 D1/D2 G 1 G 2 S1 G1 D1/D2 S2 G2 S 1 N-ch S 2 P-ch STB SER... See More ⇒

Detailed specifications: FDS4897C, STB432S, FDS4935A, FDS4935BZ, FDS5351, FDS5670, FDS5672, FDS6294, AON7403, FDS6298, STB31L01, FDS6574A, FDS6670AS, STA6968, FDS6673BZ, FDS6673BZF085, FDS6675BZ

Keywords - STB416D MOSFET specs

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Need a MOSFET replacement? Our guide shows you how to find a perfect substitute by comparing key parameters and specs