All MOSFET. STB416D Datasheet

 

STB416D Datasheet and Replacement


   Type Designator: STB416D
   Type of Transistor: MOSFET
   Type of Control Channel: NP -Channel
   Pd ⓘ - Maximum Power Dissipation: 15.6 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 40 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 3 V
   |Id| ⓘ - Maximum Drain Current: 18 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   Qg ⓘ - Total Gate Charge: 11.5 nC
   tr ⓘ - Rise Time: 12.2 nS
   Cossⓘ - Output Capacitance: 78 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.028 Ohm
   Package: TO263-5L
 

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STB416D Datasheet (PDF)

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STB416D

GreenProductSTB416DaS mHop Microelectronics C orp.Ver 1.0Dual Enhancement Mode Field Effect Transistor (N and P Channel)PRODUCT SUMMARY (N-Channel) PRODUCT SUMMARY (P-Channel)RDS(ON) (m) Max RDS(ON) (m) MaxVDSS ID VDSS ID28 @ VGS=10V 36 @ VGS=-10V40V 18A -40V -16A43 @ VGS=4.5V 61 @ VGS=-4.5VD1 D2D1/D2G 1G 2S1G1D1/D2S2G2S 1 N-ch S 2 P-chSTB SER

Datasheet: FDS4897C , STB432S , FDS4935A , FDS4935BZ , FDS5351 , FDS5670 , FDS5672 , FDS6294 , EMB04N03H , FDS6298 , STB31L01 , FDS6574A , FDS6670AS , STA6968 , FDS6673BZ , FDS6673BZF085 , FDS6675BZ .

History: APT20M19JVR

Keywords - STB416D MOSFET datasheet

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