SWB10N65K2 PDF and Equivalents Search

 

SWB10N65K2 Specs and Replacement

Type Designator: SWB10N65K2

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 183.8 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 650 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V

|Id| ⓘ - Maximum Drain Current: 10 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 32 nS

Cossⓘ - Output Capacitance: 38 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.4 Ohm

Package: TO263

SWB10N65K2 substitution

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SWB10N65K2 datasheet

 ..1. Size:952K  samwin
 swf10n65k2 swd10n65k2 swb10n65k2.pdf pdf_icon

SWB10N65K2

SW10N65K2 N-channel Enhanced mode TO-220F/TO-252/TO-263 MOSFET Features TO-220F TO-252 TO-263 BVDSS 650V High ruggedness ID 10A Low RDS(ON) (Typ 0.3 )@VGS=10V RDS(ON) 0.3 Low Gate Charge (Typ 21nC) Improved dv/dt Capability 2 1 1 1 100% Avalanche Tested 2 2 2 3 3 3 1 Application Charge, LED, PC Power 1. Gate 2. Drain 3. Sou... See More ⇒

Detailed specifications: SWB075R08E7T, SWB076R68E7T, SWB078R08ET, SWB085R68E7T, SWB086R68E7T, SWB088R06VT, SWB088R08E8T, SWB090R08ET, IRF740, SWB13N65K2, SWB16N70K, SWB640D, SWB7N65DW, SWC1N60, SWC2N40D, SWD020R03VLT, SWD026R03VT

Keywords - SWB10N65K2 MOSFET specs

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