All MOSFET. SWB10N65K2 Datasheet

 

SWB10N65K2 Datasheet and Replacement


   Type Designator: SWB10N65K2
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 183.8 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 650 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Id| ⓘ - Maximum Drain Current: 10 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 32 nS
   Cossⓘ - Output Capacitance: 38 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.4 Ohm
   Package: TO263
 

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SWB10N65K2 Datasheet (PDF)

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SWB10N65K2

SW10N65K2 N-channel Enhanced mode TO-220F/TO-252/TO-263 MOSFET Features TO-220F TO-252 TO-263 BVDSS : 650V High ruggedness ID : 10A Low RDS(ON) (Typ 0.3)@VGS=10V RDS(ON) : 0.3 Low Gate Charge (Typ 21nC) Improved dv/dt Capability 2 1 1 1 100% Avalanche Tested 2 2 2 3 3 3 1 Application: Charge, LED, PC Power 1. Gate 2. Drain 3. Sou

Datasheet: SWB075R08E7T , SWB076R68E7T , SWB078R08ET , SWB085R68E7T , SWB086R68E7T , SWB088R06VT , SWB088R08E8T , SWB090R08ET , IRF740 , SWB13N65K2 , SWB16N70K , SWB640D , SWB7N65DW , SWC1N60 , SWC2N40D , SWD020R03VLT , SWD026R03VT .

History: NCEP4075AGU

Keywords - SWB10N65K2 MOSFET datasheet

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