All MOSFET. SWB10N65K2 Datasheet

 

SWB10N65K2 Datasheet and Replacement


   Type Designator: SWB10N65K2
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 183.8 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 650 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Id|ⓘ - Maximum Drain Current: 10 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   trⓘ - Rise Time: 32 nS
   Cossⓘ - Output Capacitance: 38 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.4 Ohm
   Package: TO263
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SWB10N65K2 Datasheet (PDF)

 ..1. Size:952K  samwin
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SWB10N65K2

SW10N65K2 N-channel Enhanced mode TO-220F/TO-252/TO-263 MOSFET Features TO-220F TO-252 TO-263 BVDSS : 650V High ruggedness ID : 10A Low RDS(ON) (Typ 0.3)@VGS=10V RDS(ON) : 0.3 Low Gate Charge (Typ 21nC) Improved dv/dt Capability 2 1 1 1 100% Avalanche Tested 2 2 2 3 3 3 1 Application: Charge, LED, PC Power 1. Gate 2. Drain 3. Sou

Datasheet: FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , GMM3x120-0075X2-SMD , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , CS150N03A8 , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL , FDMS3610S , GWM100-0085X1-SMD , FDMS3606S , GWM100-01X1-SL .

History: IPB22N03S4L-15 | LSC65R280HT | 2SK3700

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