All MOSFET. SWB640D Datasheet

 

SWB640D MOSFET. Datasheet pdf. Equivalent


   Type Designator: SWB640D
   Marking Code: SW640D
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 110.6 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 200 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4 V
   |Id|ⓘ - Maximum Drain Current: 18 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   Qgⓘ - Total Gate Charge: 38 nC
   trⓘ - Rise Time: 57 nS
   Cossⓘ - Output Capacitance: 200 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.18 Ohm
   Package: TO263

 SWB640D Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

SWB640D Datasheet (PDF)

 ..1. Size:1088K  samwin
 swp640d swy640d swb640d.pdf

SWB640D SWB640D

SW640D N-channel Enhanced mode TO-220/TO-220FT/TO-263 MOSFET TO-220 TO-220FT TO-263 BVDSS : 200V Features ID : 18A High ruggedness RDS(ON) : 0.15 Low RDS(ON) (Typ 0.15)@VGS=10V Low Gate Charge (Typ 38nC) 2 Improved dv/dt Capability 1 1 1 100% Avalanche Tested 2 1 2 2 3 3 3 Application: LED , Adaptor 1. Gate 2. Drain 3. Sour

Datasheet: FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , GMM3x120-0075X2-SMD , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , STP80NF70 , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL , FDMS3610S , GWM100-0085X1-SMD , FDMS3606S , GWM100-01X1-SL .

 

 
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