All MOSFET. SWB7N65DW Datasheet

 

SWB7N65DW Datasheet and Replacement


   Type Designator: SWB7N65DW
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 179 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 650 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Id| ⓘ - Maximum Drain Current: 7 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 58 nS
   Cossⓘ - Output Capacitance: 127 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 1.2 Ohm
   Package: TO263
 

 SWB7N65DW substitution

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SWB7N65DW Datasheet (PDF)

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SWB7N65DW

SW7N65DW N-channel Enhanced mode TO-263 MOSFET Features BVDSS : 650V TO-263 ID : 7A High ruggedness Low RDS(ON) (Typ 0.96)@VGS=10V RDS(ON) : 0.96 Low Gate Charge (Typ 34nC) 2 Improved dv/dt Capability 1 100% Avalanche Tested 2 1 3 Application: LED , Charge, PC Power 1. Gate 2. Drain 3. Source 3 General Description This power

Datasheet: SWB086R68E7T , SWB088R06VT , SWB088R08E8T , SWB090R08ET , SWB10N65K2 , SWB13N65K2 , SWB16N70K , SWB640D , IRF540N , SWC1N60 , SWC2N40D , SWD020R03VLT , SWD026R03VT , SWD030R03VLT , SWD030R04VT , SWD040R03VLT , SWD046R68E8T .

History: AOD208 | UPA2719GR

Keywords - SWB7N65DW MOSFET datasheet

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