SWB7N65DW Specs and Replacement
Type Designator: SWB7N65DW
Type of Transistor: MOSFET
Type of Control Channel: N-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 179 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 650 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
|Id| ⓘ - Maximum Drain Current: 7 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Electrical Characteristics
tr ⓘ - Rise Time: 58 nS
Cossⓘ - Output Capacitance: 127 pF
RDSonⓘ - Maximum Drain-Source On-State Resistance: 1.2 Ohm
Package: TO263
SWB7N65DW substitution
- MOSFET ⓘ Cross-Reference Search
SWB7N65DW datasheet
swb7n65dw.pdf
SW7N65DW N-channel Enhanced mode TO-263 MOSFET Features BVDSS 650V TO-263 ID 7A High ruggedness Low RDS(ON) (Typ 0.96 )@VGS=10V RDS(ON) 0.96 Low Gate Charge (Typ 34nC) 2 Improved dv/dt Capability 1 100% Avalanche Tested 2 1 3 Application LED , Charge, PC Power 1. Gate 2. Drain 3. Source 3 General Description This power ... See More ⇒
Detailed specifications: SWB086R68E7T, SWB088R06VT, SWB088R08E8T, SWB090R08ET, SWB10N65K2, SWB13N65K2, SWB16N70K, SWB640D, IRF540, SWC1N60, SWC2N40D, SWD020R03VLT, SWD026R03VT, SWD030R03VLT, SWD030R04VT, SWD040R03VLT, SWD046R68E8T
Keywords - SWB7N65DW MOSFET specs
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Can't find your MOSFET? Learn how to find a substitute transistor by analyzing voltage, current and package compatibility
History: SWB10N65K2 | BM3415E | 2SJ78 | AP0203GMT | SFF044J
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