All MOSFET. SWB7N65DW Datasheet

 

SWB7N65DW MOSFET. Datasheet pdf. Equivalent


   Type Designator: SWB7N65DW
   Marking Code: SW7N65DW
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 179 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 650 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4.5 V
   |Id|ⓘ - Maximum Drain Current: 7 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   Qgⓘ - Total Gate Charge: 34 nC
   trⓘ - Rise Time: 58 nS
   Cossⓘ - Output Capacitance: 127 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 1.2 Ohm
   Package: TO263

 SWB7N65DW Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

SWB7N65DW Datasheet (PDF)

 ..1. Size:669K  samwin
 swb7n65dw.pdf

SWB7N65DW SWB7N65DW

SW7N65DW N-channel Enhanced mode TO-263 MOSFET Features BVDSS : 650V TO-263 ID : 7A High ruggedness Low RDS(ON) (Typ 0.96)@VGS=10V RDS(ON) : 0.96 Low Gate Charge (Typ 34nC) 2 Improved dv/dt Capability 1 100% Avalanche Tested 2 1 3 Application: LED , Charge, PC Power 1. Gate 2. Drain 3. Source 3 General Description This power

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