All MOSFET. SWC1N60 Datasheet

 

SWC1N60 Datasheet and Replacement


   Type Designator: SWC1N60
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 1.1 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 600 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Id| ⓘ - Maximum Drain Current: 0.4 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 20 nS
   Cossⓘ - Output Capacitance: 32 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 8.5 Ohm
   Package: TO92
 

 SWC1N60 substitution

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SWC1N60 Datasheet (PDF)

 ..1. Size:1087K  samwin
 swi1n60 swc1n60.pdf pdf_icon

SWC1N60

SW1N60D N-channel Enhanced TO-251/TO-92/TO251S MOSFET Features BVDSS : 600V TO-251 TO-92 TO-251S ID : 1A High ruggedness Low RDS(ON) (Typ 6.6)@VGS=10V RDS(ON) : 6.6 Low Gate Charge (Typ 6.8nC) Improved dv/dt Capability 2 1 1 1 100% Avalanche Tested 2 2 2 3 3 3 Application:Charger, Adaptor, LED 1. Gate 2. Drain 3. Source 1

Datasheet: SWB088R06VT , SWB088R08E8T , SWB090R08ET , SWB10N65K2 , SWB13N65K2 , SWB16N70K , SWB640D , SWB7N65DW , 50N06 , SWC2N40D , SWD020R03VLT , SWD026R03VT , SWD030R03VLT , SWD030R04VT , SWD040R03VLT , SWD046R68E8T , SWD050R95E8S .

History: SSF1122D | SWI7N65K2 | HPP400N06CTA | NVBGS4D1N15MC | NCE0157A2 | PTP20N60A | FHP130N10A

Keywords - SWC1N60 MOSFET datasheet

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