SWC1N60 PDF and Equivalents Search

 

SWC1N60 Specs and Replacement

Type Designator: SWC1N60

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 1.1 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 600 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V

|Id| ⓘ - Maximum Drain Current: 0.4 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 20 nS

Cossⓘ - Output Capacitance: 32 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 8.5 Ohm

Package: TO92

SWC1N60 substitution

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SWC1N60 datasheet

 ..1. Size:1087K  samwin
 swi1n60 swc1n60.pdf pdf_icon

SWC1N60

SW1N60D N-channel Enhanced TO-251/TO-92/TO251S MOSFET Features BVDSS 600V TO-251 TO-92 TO-251S ID 1A High ruggedness Low RDS(ON) (Typ 6.6 )@VGS=10V RDS(ON) 6.6 Low Gate Charge (Typ 6.8nC) Improved dv/dt Capability 2 1 1 1 100% Avalanche Tested 2 2 2 3 3 3 Application Charger, Adaptor, LED 1. Gate 2. Drain 3. Source 1... See More ⇒

Detailed specifications: SWB088R06VT, SWB088R08E8T, SWB090R08ET, SWB10N65K2, SWB13N65K2, SWB16N70K, SWB640D, SWB7N65DW, 50N06, SWC2N40D, SWD020R03VLT, SWD026R03VT, SWD030R03VLT, SWD030R04VT, SWD040R03VLT, SWD046R68E8T, SWD050R95E8S

Keywords - SWC1N60 MOSFET specs

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Step-by-step guide to finding a MOSFET replacement. Cross-reference parts and ensure compatibility for your repair or project.

 

 

 

 

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