SWD020R03VLT MOSFET. Datasheet pdf. Equivalent
Type Designator: SWD020R03VLT
Marking Code: SW020R03VLT
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pdⓘ - Maximum Power Dissipation: 125 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 2.4 V
|Id|ⓘ - Maximum Drain Current: 120 A
Tjⓘ - Maximum Junction Temperature: 150 °C
Qgⓘ - Total Gate Charge: 145 nC
trⓘ - Rise Time: 57 nS
Cossⓘ - Output Capacitance: 988 pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.003 Ohm
Package: TO252
SWD020R03VLT Transistor Equivalent Substitute - MOSFET Cross-Reference Search
SWD020R03VLT Datasheet (PDF)
swd020r03vlt.pdf
SW020R03VLTN-channel Enhanced mode TO-252 MOSFETFeaturesTO-252BVDSS : 30V High ruggedness Low RDS(ON) (Typ 3.1m)@VGS=4.5VID : 120A(Typ 2.1m)@VGS=10VRDS(ON) : 3.1m@VGS=4.5V Low Gate Charge (Typ 145nC) Improved dv/dt Capability 2.1m@VGS=10V1 100% Avalanche Tested23 Application:Synchronous Rectification,2Li Battery Protect Board,
swd026r03vt.pdf
SW026R03VT N-channel Enhanced mode TO-252 MOSFET Features BVDSS : 30V High ruggedness TO-252 Low RDS(ON) (Typ 3.5m)@VGS=4.5V ID : 80A (Typ 3.0m)@VGS=10V RDS(ON) : 3.5m@VGS=4.5V Low Gate Charge (Typ 113nC) Improved dv/dt Capability 3.0m@VGS=10V 100% Avalanche Tested 1 Application:DC-DC Converter, Inverter, 2 2 3 Synchron
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