SWD026R03VT MOSFET Datasheet: N-Ch, 30V, 80A. Full specification with pinout and replacement list

SWD026R03VT Specs and Replacement

Type Designator: SWD026R03VT

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 89.3 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 80 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 63 nS

Cossⓘ - Output Capacitance: 742 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.0038 Ohm

Package: TO252

SWD026R03VT substitution

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SWD026R03VT datasheet

..1. Size:621K samwin
swd026r03vt.pdf pdf_icon

SW026R03VT N-channel Enhanced mode TO-252 MOSFET Features BVDSS 30V High ruggedness TO-252 Low RDS(ON) (Typ 3.5m )@VGS=4.5V ID 80A (Typ 3.0m )@VGS=10V RDS(ON) 3.5m @VGS=4.5V Low Gate Charge (Typ 113nC) Improved dv/dt Capability 3.0m @VGS=10V 100% Avalanche Tested 1 Application DC-DC Converter, Inverter, 2 2 3 Synchron... See More ⇒

9.1. Size:741K samwin
swd020r03vlt.pdf pdf_icon

SW020R03VLT N-channel Enhanced mode TO-252 MOSFET Features TO-252 BVDSS 30V High ruggedness Low RDS(ON) (Typ 3.1m )@VGS=4.5V ID 120A (Typ 2.1m )@VGS=10V RDS(ON) 3.1m @VGS=4.5V Low Gate Charge (Typ 145nC) Improved dv/dt Capability 2.1m @VGS=10V 1 100% Avalanche Tested 2 3 Application Synchronous Rectification, 2 Li Battery Protect Board, ... See More ⇒

Detailed specifications: SWB10N65K2, SWB13N65K2, SWB16N70K, SWB640D, SWB7N65DW, SWC1N60, SWC2N40D, SWD020R03VLT, IRF640, SWD030R03VLT, SWD030R04VT, SWD040R03VLT, SWD046R68E8T, SWD050R95E8S, SWD051R08ES, SWD055R03VT, SWD056R68E7T