All MOSFET. SWD030R03VLT Datasheet

 

SWD030R03VLT Datasheet and Replacement


   Type Designator: SWD030R03VLT
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 113.6 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 110 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 39 nS
   Cossⓘ - Output Capacitance: 485 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.0036 Ohm
   Package: TO252
 

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SWD030R03VLT Datasheet (PDF)

 ..1. Size:731K  samwin
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SWD030R03VLT

SW030R03VLTN-channel Enhanced mode TO-252 MOSFETFeaturesTO-252BVDSS : 30V High ruggednessID : 110A Low RDS(ON) (Typ 4.4m)@VGS=4.5V(Typ 3.0m)@VGS=10VRDS(ON) :4.4m@VGS=4.5V Low Gate Charge (Typ 79nC)3.0m@VGS=10V Improved dv/dt Capability 1 100% Avalanche Tested 23 2 Application:Synchronous Rectification,Li Battery Protect Board, Moto

 6.1. Size:711K  samwin
 swd030r04vt.pdf pdf_icon

SWD030R03VLT

SW030R04VT N-channel Enhanced mode TO-252 MOSFET Features TO-252 BVDSS : 40V High ruggedness ID : 130A Low RDS(ON) (Typ 3.7m)@VGS=4.5V RDS(ON) : 3.7m@VGS=4.5V (Typ 2.8m)@VGS=10V Low Gate Charge (Typ 120nC) 2.8m@VGS=10V Improved dv/dt Capability 1 2 100% Avalanche Tested 2 3 Application:Power Supply,LED Boost 1. Gate 2

Datasheet: SWB13N65K2 , SWB16N70K , SWB640D , SWB7N65DW , SWC1N60 , SWC2N40D , SWD020R03VLT , SWD026R03VT , IRF1404 , SWD030R04VT , SWD040R03VLT , SWD046R68E8T , SWD050R95E8S , SWD051R08ES , SWD055R03VT , SWD056R68E7T , SWD062R08E8T .

History: BUZ102 | SML5020BN | RP1E100XN | PFF12N65 | STP180N4F6 | IRLL014PBF

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