All MOSFET. SWD030R04VT Datasheet

 

SWD030R04VT MOSFET. Datasheet pdf. Equivalent


   Type Designator: SWD030R04VT
   Marking Code: SW030R04VT
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 102 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 40 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 3 V
   |Id|ⓘ - Maximum Drain Current: 130 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   Qgⓘ - Total Gate Charge: 120 nC
   trⓘ - Rise Time: 54 nS
   Cossⓘ - Output Capacitance: 773 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.0035 Ohm
   Package: TO252

 SWD030R04VT Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

SWD030R04VT Datasheet (PDF)

 ..1. Size:711K  samwin
 swd030r04vt.pdf

SWD030R04VT SWD030R04VT

SW030R04VT N-channel Enhanced mode TO-252 MOSFET Features TO-252 BVDSS : 40V High ruggedness ID : 130A Low RDS(ON) (Typ 3.7m)@VGS=4.5V RDS(ON) : 3.7m@VGS=4.5V (Typ 2.8m)@VGS=10V Low Gate Charge (Typ 120nC) 2.8m@VGS=10V Improved dv/dt Capability 1 2 100% Avalanche Tested 2 3 Application:Power Supply,LED Boost 1. Gate 2

 6.1. Size:731K  samwin
 swd030r03vlt.pdf

SWD030R04VT SWD030R04VT

SW030R03VLTN-channel Enhanced mode TO-252 MOSFETFeaturesTO-252BVDSS : 30V High ruggednessID : 110A Low RDS(ON) (Typ 4.4m)@VGS=4.5V(Typ 3.0m)@VGS=10VRDS(ON) :4.4m@VGS=4.5V Low Gate Charge (Typ 79nC)3.0m@VGS=10V Improved dv/dt Capability 1 100% Avalanche Tested 23 2 Application:Synchronous Rectification,Li Battery Protect Board, Moto

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History: PHX6N60E

 

 
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