SWD030R04VT PDF and Equivalents Search

 

SWD030R04VT Specs and Replacement

Type Designator: SWD030R04VT

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 102 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 40 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 130 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 54 nS

Cossⓘ - Output Capacitance: 773 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.0035 Ohm

Package: TO252

SWD030R04VT substitution

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SWD030R04VT datasheet

 ..1. Size:711K  samwin
 swd030r04vt.pdf pdf_icon

SWD030R04VT

SW030R04VT N-channel Enhanced mode TO-252 MOSFET Features TO-252 BVDSS 40V High ruggedness ID 130A Low RDS(ON) (Typ 3.7m )@VGS=4.5V RDS(ON) 3.7m @VGS=4.5V (Typ 2.8m )@VGS=10V Low Gate Charge (Typ 120nC) 2.8m @VGS=10V Improved dv/dt Capability 1 2 100% Avalanche Tested 2 3 Application Power Supply,LED Boost 1. Gate 2... See More ⇒

 6.1. Size:731K  samwin
 swd030r03vlt.pdf pdf_icon

SWD030R04VT

SW030R03VLT N-channel Enhanced mode TO-252 MOSFET Features TO-252 BVDSS 30V High ruggedness ID 110A Low RDS(ON) (Typ 4.4m )@VGS=4.5V (Typ 3.0m )@VGS=10V RDS(ON) 4.4m @VGS=4.5V Low Gate Charge (Typ 79nC) 3.0m @VGS=10V Improved dv/dt Capability 1 100% Avalanche Tested 2 3 2 Application Synchronous Rectification, Li Battery Protect Board, Moto... See More ⇒

Detailed specifications: SWB16N70K, SWB640D, SWB7N65DW, SWC1N60, SWC2N40D, SWD020R03VLT, SWD026R03VT, SWD030R03VLT, IRLZ44N, SWD040R03VLT, SWD046R68E8T, SWD050R95E8S, SWD051R08ES, SWD055R03VT, SWD056R68E7T, SWD062R08E8T, SWD062R68E7T

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