All MOSFET. SWD046R68E8T Datasheet

 

SWD046R68E8T MOSFET. Datasheet pdf. Equivalent


   Type Designator: SWD046R68E8T
   Marking Code: SW046R68E8T
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 176 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 68 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4 V
   |Id|ⓘ - Maximum Drain Current: 120 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   Qgⓘ - Total Gate Charge: 146 nC
   trⓘ - Rise Time: 73 nS
   Cossⓘ - Output Capacitance: 546 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.0056 Ohm
   Package: TO252

 SWD046R68E8T Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

SWD046R68E8T Datasheet (PDF)

 ..1. Size:773K  samwin
 swd046r68e8t.pdf

SWD046R68E8T SWD046R68E8T

SW046R68E8TN-channel Enhanced mode TO-252 MOSFETFeaturesTO-252BVDSS : 68V High ruggednessID : 120A Low RDS(ON) (Typ 4.8m)@VGS=10VRDS(ON) : 4.8m Low Gate Charge (Typ 146nC) Improved dv/dt Capability 2 100% Avalanche Tested12 Application:Synchronous Rectification,31Li Battery Protect Board, Inverter1. Gate 2.Drain 3.SourceGeneral Des

 9.1. Size:743K  samwin
 swd040r03vlt.pdf

SWD046R68E8T SWD046R68E8T

SW040R03VLTN-channel Enhanced mode TO-252 MOSFETFeaturesTO-252BVDSS : 30V High ruggednessID : 100A Low RDS(ON) (Typ 5.1m)@VGS=4.5V(Typ 3.7m)@VGS=10VRDS(ON) : 5.1m@VGS=4.5V Low Gate Charge (Typ 59nC)3.7m@VGS=10V Improved dv/dt Capability 1 100% Avalanche Tested23 Application:Synchronous Rectification, 2Li Battery Protect Board, In

Datasheet: IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , 4N60 , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .

 

 
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