SWD046R68E8T MOSFET Datasheet: N-Ch, 68V, 120A. Full specification with pinout and replacement list

SWD046R68E8T Specs and Replacement

Type Designator: SWD046R68E8T

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 176 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 68 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 120 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 73 nS

Cossⓘ - Output Capacitance: 546 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.0056 Ohm

Package: TO252

SWD046R68E8T substitution

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SWD046R68E8T datasheet

..1. Size:773K samwin
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SW046R68E8T N-channel Enhanced mode TO-252 MOSFET Features TO-252 BVDSS 68V High ruggedness ID 120A Low RDS(ON) (Typ 4.8m )@VGS=10V RDS(ON) 4.8m Low Gate Charge (Typ 146nC) Improved dv/dt Capability 2 100% Avalanche Tested 1 2 Application Synchronous Rectification, 3 1 Li Battery Protect Board, Inverter 1. Gate 2.Drain 3.Source General Des... See More ⇒

9.1. Size:743K samwin
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SW040R03VLT N-channel Enhanced mode TO-252 MOSFET Features TO-252 BVDSS 30V High ruggedness ID 100A Low RDS(ON) (Typ 5.1m )@VGS=4.5V (Typ 3.7m )@VGS=10V RDS(ON) 5.1m @VGS=4.5V Low Gate Charge (Typ 59nC) 3.7m @VGS=10V Improved dv/dt Capability 1 100% Avalanche Tested 2 3 Application Synchronous Rectification, 2 Li Battery Protect Board, In... See More ⇒

Detailed specifications: SWB7N65DW, SWC1N60, SWC2N40D, SWD020R03VLT, SWD026R03VT, SWD030R03VLT, SWD030R04VT, SWD040R03VLT, IRF640N, SWD050R95E8S, SWD051R08ES, SWD055R03VT, SWD056R68E7T, SWD062R08E8T, SWD062R68E7T, SWD065R03VLT, SWD065R68E7T