SWD046R68E8T Datasheet and Replacement
Type Designator: SWD046R68E8T
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pd ⓘ - Maximum Power Dissipation: 176 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 68 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 120 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
tr ⓘ - Rise Time: 73 nS
Cossⓘ - Output Capacitance: 546 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.0056 Ohm
Package: TO252
SWD046R68E8T substitution
SWD046R68E8T Datasheet (PDF)
swd046r68e8t.pdf

SW046R68E8TN-channel Enhanced mode TO-252 MOSFETFeaturesTO-252BVDSS : 68V High ruggednessID : 120A Low RDS(ON) (Typ 4.8m)@VGS=10VRDS(ON) : 4.8m Low Gate Charge (Typ 146nC) Improved dv/dt Capability 2 100% Avalanche Tested12 Application:Synchronous Rectification,31Li Battery Protect Board, Inverter1. Gate 2.Drain 3.SourceGeneral Des
swd040r03vlt.pdf

SW040R03VLTN-channel Enhanced mode TO-252 MOSFETFeaturesTO-252BVDSS : 30V High ruggednessID : 100A Low RDS(ON) (Typ 5.1m)@VGS=4.5V(Typ 3.7m)@VGS=10VRDS(ON) : 5.1m@VGS=4.5V Low Gate Charge (Typ 59nC)3.7m@VGS=10V Improved dv/dt Capability 1 100% Avalanche Tested23 Application:Synchronous Rectification, 2Li Battery Protect Board, In
Datasheet: SWB7N65DW , SWC1N60 , SWC2N40D , SWD020R03VLT , SWD026R03VT , SWD030R03VLT , SWD030R04VT , SWD040R03VLT , IRF630 , SWD050R95E8S , SWD051R08ES , SWD055R03VT , SWD056R68E7T , SWD062R08E8T , SWD062R68E7T , SWD065R03VLT , SWD065R68E7T .
History: STB55NF06LT4 | SIHF710 | 2SK4114 | SFB053N100C3
Keywords - SWD046R68E8T MOSFET datasheet
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History: STB55NF06LT4 | SIHF710 | 2SK4114 | SFB053N100C3



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