SWD078R08E8T MOSFET Datasheet: N-Ch, 80V, 95A. Full specification with pinout and replacement list

SWD078R08E8T Specs and Replacement

   Type Designator: SWD078R08E8T
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel

Absolute Maximum Ratings

   Pd ⓘ - Maximum Power Dissipation: 138.9 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 80 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 95 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

   tr ⓘ - Rise Time: 67 nS
   Cossⓘ - Output Capacitance: 240 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.0099 Ohm
   Package: TO252

SWD078R08E8T substitution

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SWD078R08E8T datasheet

..1. Size:719K samwin
swd078r08e8t.pdf pdf_icon

SW078R08E8T N-channel Enhanced mode TO-252 MOSFET Features TO-252 BVDSS 80V High ruggedness ID 95A Low RDS(ON) (Typ 8.6m )@VGS=10V RDS(ON) 8.6m Low Gate Charge (Typ 92nC) Improved dv/dt Capability 2 100% Avalanche Tested 1 2 Application Synchronous Rectification, 3 1 Li Battery Protect Board, Inverter 1. Gate 2.Drain 3.Source General Descr... See More ⇒

9.1. Size:657K samwin
swi075r06et swd075r06et.pdf pdf_icon

SW075R06ET N-channel Enhanced mode TO-251/TO-252 MOSFET Features TO-251 TO-252 BVDSS 60V High ruggedness ID 65A Low RDS(ON) (Typ 7.5m )@VGS=10V Low Gate Charge (Typ 78nC) RDS(ON) 7.5m Improved dv/dt Capability 100% Avalanche Tested 2 1 1 Application Synchronous Rectification, 2 2 3 3 Li Battery Protect Board, Inverter 1 1. Gate 2. Drai... See More ⇒

9.2. Size:726K samwin
swd070r08e7t.pdf pdf_icon

SW070R08E7T N-channel Enhanced mode TO-252 MOSFET Features TO-252 BVDSS 80V High ruggedness ID 95A Low RDS(ON) (Typ 7.6m )@VGS=10V RDS(ON) 7.6m Low Gate Charge (Typ 101nC) Improved dv/dt Capability 2 100% Avalanche Tested 1 2 Application Synchronous Rectification, 3 1 Li Battery Protect Board, Inverter 1. Gate 2.Drain 3.Source General Desc... See More ⇒

9.3. Size:728K samwin
swd076r68e7t.pdf pdf_icon

SW076R68E7T N-channel Enhanced mode TO-252 MOSFET Features TO-252 BVDSS 68V High ruggedness ID 85A Low RDS(ON) (Typ 8m )@VGS=10V Low Gate Charge (Typ 80nC) RDS(ON) 8m Improved dv/dt Capability 100% Avalanche Tested 2 1 2 Application Synchronous Rectification, 3 Li Battery Protect Board, Inverter 1 1. Gate 2.Drain 3.Source 3 General Descrip... See More ⇒

Detailed specifications: SWD062R68E7T , SWD065R03VLT , SWD065R68E7T , SWD068R08E8T , SWD068R68E7T , SWD070R08E7T , SWD075R06ET , SWD076R68E7T , IRF9540 , SWD085R68E7T , SWD086R68E7T , SWD088R08E8T , SWD106R95VS , SWD10N50K , SWD10N65K , SWD10N65K2 , SWD10N80K2 .