SWD078R08E8T - параметры транзистора MOSFET, его аналоги, datasheet

SWD078R08E8T Datasheet (PDF)

..1. Size:719K samwin
swd078r08e8t.pdf pdf_icon

SW078R08E8TN-channel Enhanced mode TO-252 MOSFETFeaturesTO-252BVDSS : 80V High ruggednessID : 95A Low RDS(ON) (Typ 8.6m)@VGS=10VRDS(ON) : 8.6m Low Gate Charge (Typ 92nC) Improved dv/dt Capability 2 100% Avalanche Tested12 Application:Synchronous Rectification,31Li Battery Protect Board, Inverter1. Gate 2.Drain 3.SourceGeneral Descr

9.1. Size:657K samwin
swi075r06et swd075r06et.pdf pdf_icon

SW075R06ETN-channel Enhanced mode TO-251/TO-252 MOSFETFeaturesTO-251 TO-252BVDSS : 60V High ruggednessID : 65A Low RDS(ON) (Typ 7.5m)@VGS=10V Low Gate Charge (Typ 78nC)RDS(ON) : 7.5m Improved dv/dt Capability 100% Avalanche Tested211 Application:Synchronous Rectification, 2233Li Battery Protect Board, Inverter11. Gate 2. Drai

9.2. Size:726K samwin
swd070r08e7t.pdf pdf_icon

SW070R08E7TN-channel Enhanced mode TO-252 MOSFETFeaturesTO-252BVDSS : 80V High ruggednessID : 95A Low RDS(ON) (Typ 7.6m)@VGS=10VRDS(ON) : 7.6m Low Gate Charge (Typ 101nC) Improved dv/dt Capability 2 100% Avalanche Tested12 Application:Synchronous Rectification,31Li Battery Protect Board, Inverter1. Gate 2.Drain 3.SourceGeneral Desc

9.3. Size:728K samwin
swd076r68e7t.pdf pdf_icon

SW076R68E7TN-channel Enhanced mode TO-252 MOSFETFeaturesTO-252BVDSS : 68V High ruggednessID : 85A Low RDS(ON) (Typ 8m)@VGS=10V Low Gate Charge (Typ 80nC)RDS(ON) : 8m Improved dv/dt Capability 100% Avalanche Tested 212 Application:Synchronous Rectification,3Li Battery Protect Board, Inverter11. Gate 2.Drain 3.Source3General Descrip

Другие MOSFET... AM3401 , AM3402N , AM3403P , AM3405P , AM3406 , AM3406N , AM3407 , AM3407PE , IRFZ48N , AM3412N , AM3413 , AM3413P , AM3415 , AM3415A , AM3416 , AM3422 , AM3423P .