All MOSFET. SWD110R03VT Datasheet

 

SWD110R03VT Datasheet and Replacement


   Type Designator: SWD110R03VT
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 136 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 55 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 53 nS
   Cossⓘ - Output Capacitance: 165 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.0125 Ohm
   Package: TO252
 

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SWD110R03VT Datasheet (PDF)

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SWD110R03VT

SW110R03VT N-channel Enhanced mode TO-252 MOSFET Features BVDSS : 30V TO-252 High ruggedness ID : 55A Low RDS(ON) (Typ 14m)@VGS=4.5V RDS(ON) : 14m@VGS=4.5V Low RDS(ON) (Typ 10m)@VGS=10V Low Gate Charge (Typ 21nC) 10m@VGS=10V Improved dv/dt Capability 1 2 100% Avalanche Tested 2 3 Application:DC-DC Converter,Motor

Datasheet: SWD085R68E7T , SWD086R68E7T , SWD088R08E8T , SWD106R95VS , SWD10N50K , SWD10N65K , SWD10N65K2 , SWD10N80K2 , SPP20N60C3 , SWD13N60K2 , SWD13N65K2 , SWD15N65J , SWD160R12VT , SWD19N10 , SWD1N60DC , SWD200R10VT , SWD20N20D .

History: 10N80

Keywords - SWD110R03VT MOSFET datasheet

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