SWD160R12VT MOSFET. Datasheet pdf. Equivalent
Type Designator: SWD160R12VT
Marking Code: SW160R12VT
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pdⓘ - Maximum Power Dissipation: 125 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 120 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 2.3 V
|Id|ⓘ - Maximum Drain Current: 50 A
Tjⓘ - Maximum Junction Temperature: 150 °C
Qgⓘ - Total Gate Charge: 64 nC
trⓘ - Rise Time: 41 nS
Cossⓘ - Output Capacitance: 204 pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.0205 Ohm
Package: TO252
SWD160R12VT Transistor Equivalent Substitute - MOSFET Cross-Reference Search
SWD160R12VT Datasheet (PDF)
..1. Size:691K samwin
swi160r12vt swd160r12vt.pdf
swi160r12vt swd160r12vt.pdf
SW160R12VTN-channel Enhanced mode TO-251/TO-252 MOSFETFeaturesTO-251 TO-252BVDSS : 120V High ruggednessID : 50A Low RDS(ON) (Typ 18.3m)@VGS=4.5VLow RDS(ON) (Typ 16.4m)@VGS=10VRDS(ON) : 18.3m@VGS=4.5V Low Gate Charge (Typ 64nC)16.4m@VGS=10V Improved dv/dt Capability 1 12 2 100% Avalanche Tested3 3 2 Application:Synchronous Rectifica
Datasheet: FQT7N10L , FDP083N15A , FQU10N20C , FDP075N15A , FQU11P06 , FQU12N20 , FDPF085N10A , FQU13N06L , IRF540N , FDB86102LZ , FQU17P06 , FQU1N60C , FDP085N10A , FQU20N06L , FQU2N100 , FQU2N60C , FDMC8030 .
