SWD160R12VT Specs and Replacement
Type Designator: SWD160R12VT
Type of Transistor: MOSFET
Type of Control Channel: N-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 125 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 120 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 50 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Electrical Characteristics
tr ⓘ - Rise Time: 41 nS
Cossⓘ - Output Capacitance: 204 pF
RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.0205 Ohm
Package: TO252
SWD160R12VT substitution
- MOSFET ⓘ Cross-Reference Search
SWD160R12VT datasheet
swi160r12vt swd160r12vt.pdf
SW160R12VT N-channel Enhanced mode TO-251/TO-252 MOSFET Features TO-251 TO-252 BVDSS 120V High ruggedness ID 50A Low RDS(ON) (Typ 18.3m )@VGS=4.5V Low RDS(ON) (Typ 16.4m )@VGS=10V RDS(ON) 18.3m @VGS=4.5V Low Gate Charge (Typ 64nC) 16.4m @VGS=10V Improved dv/dt Capability 1 1 2 2 100% Avalanche Tested 3 3 2 Application Synchronous Rectifica... See More ⇒
Detailed specifications: SWD10N50K, SWD10N65K, SWD10N65K2, SWD10N80K2, SWD110R03VT, SWD13N60K2, SWD13N65K2, SWD15N65J, SKD502T, SWD19N10, SWD1N60DC, SWD200R10VT, SWD20N20D, SWD2N40DC, SWD2N60DC, SWD2N65K, SWD2N70D
Keywords - SWD160R12VT MOSFET specs
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SWD160R12VT replacement
Need a MOSFET replacement? Our guide shows you how to find a perfect substitute by comparing key parameters and specs
History: 2SK1014 | CS12N65FA9R
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