All MOSFET. SWD19N10 Datasheet

 

SWD19N10 MOSFET. Datasheet pdf. Equivalent


   Type Designator: SWD19N10
   Marking Code: SW19N10
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 91.2 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 100 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 25 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4 V
   |Id|ⓘ - Maximum Drain Current: 19 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   Qgⓘ - Total Gate Charge: 15 nC
   trⓘ - Rise Time: 40 nS
   Cossⓘ - Output Capacitance: 108 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.12 Ohm
   Package: TO252

 SWD19N10 Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

SWD19N10 Datasheet (PDF)

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 swp19n10 swd19n10 swi19n10.pdf

SWD19N10 SWD19N10

SW19N10 N-channel Enhanced mode TO-220/TO-252/TO-251 MOSFET Features BVDSS :100V TO-220 TO-252 TO-251 ID : 19A High ruggedness Low RDS(ON) (Typ 0.1)@VGS=10V RDS(ON) : 0.1 Low Gate Charge (Typ 15nC) Improved dv/dt Capability 100% Avalanche Tested 1 1 1 2 2 2 2 Application:Synchronous Rectification, 3 3 3 Li Battery Protect Boa

Datasheet: IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , MMIS60R580P , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .

 

 
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