SWD19N10 Specs and Replacement
Type Designator: SWD19N10
Type of Transistor: MOSFET
Type of Control Channel: N-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 91.2 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 100 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 25 V
|Id| ⓘ - Maximum Drain Current: 19 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Electrical Characteristics
tr ⓘ - Rise Time: 40 nS
Cossⓘ - Output Capacitance: 108 pF
RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.12 Ohm
Package: TO252
SWD19N10 substitution
- MOSFET ⓘ Cross-Reference Search
SWD19N10 datasheet
swp19n10 swd19n10 swi19n10.pdf
SW19N10 N-channel Enhanced mode TO-220/TO-252/TO-251 MOSFET Features BVDSS 100V TO-220 TO-252 TO-251 ID 19A High ruggedness Low RDS(ON) (Typ 0.1 )@VGS=10V RDS(ON) 0.1 Low Gate Charge (Typ 15nC) Improved dv/dt Capability 100% Avalanche Tested 1 1 1 2 2 2 2 Application Synchronous Rectification, 3 3 3 Li Battery Protect Boa... See More ⇒
Detailed specifications: SWD10N65K, SWD10N65K2, SWD10N80K2, SWD110R03VT, SWD13N60K2, SWD13N65K2, SWD15N65J, SWD160R12VT, K4145, SWD1N60DC, SWD200R10VT, SWD20N20D, SWD2N40DC, SWD2N60DC, SWD2N65K, SWD2N70D, SWD3205B
Keywords - SWD19N10 MOSFET specs
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Can't find your MOSFET? Learn how to find a substitute transistor by analyzing voltage, current and package compatibility
History: SUD45P03-09
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