SWD19N10 Datasheet and Replacement
Type Designator: SWD19N10
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pd ⓘ - Maximum Power Dissipation: 91.2 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 100 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 25 V
|Id| ⓘ - Maximum Drain Current: 19 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
tr ⓘ - Rise Time: 40 nS
Cossⓘ - Output Capacitance: 108 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.12 Ohm
Package: TO252
SWD19N10 substitution
SWD19N10 Datasheet (PDF)
swp19n10 swd19n10 swi19n10.pdf
SW19N10 N-channel Enhanced mode TO-220/TO-252/TO-251 MOSFET Features BVDSS :100V TO-220 TO-252 TO-251 ID : 19A High ruggedness Low RDS(ON) (Typ 0.1)@VGS=10V RDS(ON) : 0.1 Low Gate Charge (Typ 15nC) Improved dv/dt Capability 100% Avalanche Tested 1 1 1 2 2 2 2 Application:Synchronous Rectification, 3 3 3 Li Battery Protect Boa
Datasheet: SWD10N65K , SWD10N65K2 , SWD10N80K2 , SWD110R03VT , SWD13N60K2 , SWD13N65K2 , SWD15N65J , SWD160R12VT , K4145 , SWD1N60DC , SWD200R10VT , SWD20N20D , SWD2N40DC , SWD2N60DC , SWD2N65K , SWD2N70D , SWD3205B .
History: 2N90G-TN3-R
Keywords - SWD19N10 MOSFET datasheet
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Can't find your MOSFET? Learn how to find a substitute transistor by analyzing voltage, current and package compatibility
History: 2N90G-TN3-R
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