All MOSFET. SWD19N10 Datasheet

 

SWD19N10 Datasheet and Replacement


   Type Designator: SWD19N10
   Marking Code: SW19N10
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 91.2 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 100 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 25 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4 V
   |Id| ⓘ - Maximum Drain Current: 19 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   Qg ⓘ - Total Gate Charge: 15 nC
   tr ⓘ - Rise Time: 40 nS
   Cossⓘ - Output Capacitance: 108 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.12 Ohm
   Package: TO252
 

 SWD19N10 substitution

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SWD19N10 Datasheet (PDF)

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SWD19N10

SW19N10 N-channel Enhanced mode TO-220/TO-252/TO-251 MOSFET Features BVDSS :100V TO-220 TO-252 TO-251 ID : 19A High ruggedness Low RDS(ON) (Typ 0.1)@VGS=10V RDS(ON) : 0.1 Low Gate Charge (Typ 15nC) Improved dv/dt Capability 100% Avalanche Tested 1 1 1 2 2 2 2 Application:Synchronous Rectification, 3 3 3 Li Battery Protect Boa

Datasheet: SWD10N65K , SWD10N65K2 , SWD10N80K2 , SWD110R03VT , SWD13N60K2 , SWD13N65K2 , SWD15N65J , SWD160R12VT , IRFB3607 , SWD1N60DC , SWD200R10VT , SWD20N20D , SWD2N40DC , SWD2N60DC , SWD2N65K , SWD2N70D , SWD3205B .

History: STB40N20

Keywords - SWD19N10 MOSFET datasheet

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