SWD200R10VT MOSFET Datasheet: N-Ch, 100V, 36A. Full specification with pinout and replacement list

SWD200R10VT Specs and Replacement

Type Designator: SWD200R10VT

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 117 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 100 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 36 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 34 nS

Cossⓘ - Output Capacitance: 165 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.023 Ohm

Package: TO252

SWD200R10VT substitution

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SWD200R10VT datasheet

..1. Size:724K samwin
swd200r10vt swi200r10vt.pdf pdf_icon

SW200R10VT N-channel Enhanced mode TO-252/TO-251 MOSFET Features TO-251 TO-252 BVDSS 100V High ruggedness ID 36A Low RDS(ON) (Typ 19.5m )@VGS=4.5V RDS(ON) 19.5m @VGS=4.5V (Typ 18.7m )@VGS=10V Low Gate Charge (Typ 86nC) 18.7m @VGS=10V Improved dv/dt Capability 1 1 2 2 100% Avalanche Tested 3 2 3 Application Syn... See More ⇒

9.1. Size:703K samwin
swd20n20d swi20n20d.pdf pdf_icon

SW20N20D N-channel Enhanced mode TO-252/TO-251 MOSFET TO-252 TO-251 Features BVDSS 200V ID 20A High ruggedness Low RDS(ON) (Typ 0.16 )@VGS=10V RDS(ON) 0.16 Low Gate Charge (Typ 37nC) Improved dv/dt Capability 2 1 1 100% Avalanche Tested 2 2 3 3 Application LED,DC-DC 1 1. Gate 2. Drain 3. Source 3 General Description Th... See More ⇒

Detailed specifications: SWD10N80K2, SWD110R03VT, SWD13N60K2, SWD13N65K2, SWD15N65J, SWD160R12VT, SWD19N10, SWD1N60DC, AON7410, SWD20N20D, SWD2N40DC, SWD2N60DC, SWD2N65K, SWD2N70D, SWD3205B, SWD340R10VT, SWD3N80D