SWD200R10VT MOSFET. Datasheet pdf. Equivalent
Type Designator: SWD200R10VT
Marking Code: SW200R10VT
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pdⓘ - Maximum Power Dissipation: 117 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 100 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 2.5 V
|Id|ⓘ - Maximum Drain Current: 36 A
Tjⓘ - Maximum Junction Temperature: 150 °C
Qgⓘ - Total Gate Charge: 86 nC
trⓘ - Rise Time: 34 nS
Cossⓘ - Output Capacitance: 165 pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.023 Ohm
Package: TO252
SWD200R10VT Transistor Equivalent Substitute - MOSFET Cross-Reference Search
SWD200R10VT Datasheet (PDF)
swd200r10vt swi200r10vt.pdf
SW200R10VT N-channel Enhanced mode TO-252/TO-251 MOSFET Features TO-251 TO-252 BVDSS : 100V High ruggedness ID : 36A Low RDS(ON) (Typ 19.5m)@VGS=4.5V RDS(ON) : 19.5m@VGS=4.5V (Typ 18.7m)@VGS=10V Low Gate Charge (Typ 86nC) 18.7m@VGS=10V Improved dv/dt Capability 1 1 2 2 100% Avalanche Tested 3 2 3 Application: Syn
swd20n20d swi20n20d.pdf
SW20N20D N-channel Enhanced mode TO-252/TO-251 MOSFET TO-252 TO-251 Features BVDSS : 200V ID : 20A High ruggedness Low RDS(ON) (Typ 0.16)@VGS=10V RDS(ON) : 0.16 Low Gate Charge (Typ 37nC) Improved dv/dt Capability 2 1 1 100% Avalanche Tested 2 2 3 3 Application:LED,DC-DC 1 1. Gate 2. Drain 3. Source 3 General Description Th
Datasheet: FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , GMM3x120-0075X2-SMD , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , RFP50N06 , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL , FDMS3610S , GWM100-0085X1-SMD , FDMS3606S , GWM100-01X1-SL .
