All MOSFET. SWD340R10VT Datasheet

 

SWD340R10VT MOSFET. Datasheet pdf. Equivalent


   Type Designator: SWD340R10VT
   Marking Code: SW340R10VT
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 114 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 100 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 3 V
   |Id|ⓘ - Maximum Drain Current: 34 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   Qgⓘ - Total Gate Charge: 61 nC
   trⓘ - Rise Time: 26 nS
   Cossⓘ - Output Capacitance: 107 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.036 Ohm
   Package: TO252

 SWD340R10VT Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

SWD340R10VT Datasheet (PDF)

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 swp340r10vt swd340r10vt.pdf

SWD340R10VT SWD340R10VT

SW340R10VT N-channel Enhanced mode TO-220/TO-252 MOSFET Features TO-220 TO-252 BVDSS : 100V High ruggedness ID : 34A Low RDS(ON) (Typ 32m)@VGS=4.5V RDS(ON) : 32m@VGS=4.5V (Typ 30m)@VGS=10V Low Gate Charge (Typ 61nC) 30m@VGS=10V Improved dv/dt Capability 1 1 2 2 100% Avalanche Tested 2 3 3 Application:Power Supply,LED Bo

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