SWD70N10V Specs and Replacement
Type Designator: SWD70N10V
Type of Transistor: MOSFET
Type of Control Channel: N-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 136 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 95 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 70 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Electrical Characteristics
tr ⓘ - Rise Time: 87 nS
Cossⓘ - Output Capacitance: 177 pF
RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.013 Ohm
Package: TO252
SWD70N10V substitution
- MOSFET ⓘ Cross-Reference Search
SWD70N10V datasheet
swi70n10v swd70n10v swp70n10v.pdf
SW70N10V N-channel Enhanced mode TO-251/TO-252/TO-220 MOSFET Features BVDSS 95V TO-251 TO-252 TO-220 High ruggedness ID 70A Low RDS(ON) (Typ 12.4m )@VGS=4.5V Low RDS(ON) (Typ 11.7m )@VGS=10V RDS(ON) 12.4m @VGS=4.5V Low Gate Charge (Typ 117nC) 11.7m @VGS=10V Improved dv/dt Capability 100% Avalanche Tested 1 1 1 2 2 ... See More ⇒
Detailed specifications: NCE60R360D, NCE60R360, NCE60R360F, SWD6N60D, SWD6N65D, SWD6N65K, SWD6N70DB, SWD6N80DE, P60NF06, SWD740D, SWD7N60K2F, SWD7N65DA, SWD7N65DD, SWD7N65J, SWD7N65K, SWD7N65K2, SWD7N65M
Keywords - SWD70N10V MOSFET specs
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Learn how to find the right MOSFET substitute. A guide to cross-reference, check specs and replace MOSFETs in your circuits.
History: SWD7N60K2F | SWF17N80K | RFP4N40
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