All MOSFET. SWD80N04V Datasheet

 

SWD80N04V MOSFET. Datasheet pdf. Equivalent


   Type Designator: SWD80N04V
   Marking Code: SW80N04V
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 104 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 40 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 2.5 V
   |Id|ⓘ - Maximum Drain Current: 80 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   Qgⓘ - Total Gate Charge: 49 nC
   trⓘ - Rise Time: 55 nS
   Cossⓘ - Output Capacitance: 323 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.009 Ohm
   Package: TO252

 SWD80N04V Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

SWD80N04V Datasheet (PDF)

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 swi80n04v swd80n04v.pdf

SWD80N04V SWD80N04V

SW80N04V N-channel Enhanced mode TO-251/TO-252 MOSFET Features BVDSS : 40V TO-251 TO-252 ID : 80A High ruggedness Low RDS(ON) Typ 7.2m@VGS=4.5V RDS(ON) : 7.2m@VGS=4.5V Typ 6.0m@VGS=10V 6.0m@VGS=10V Low Gate Charge (Typ 49nC) Improved dv/dt Capability 1 1 2 2 2 100% Avalanche Tested 3 3 Application: LED, Charger, Ada

Datasheet: IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , IRFP250 , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .

History: PJD4NA65 | SVF4N65RMJ | SWN7N65K2 | RU20P3C | SWU6N80D | SWMN7N65J | 2SK2397-01MR

 

 
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