All MOSFET. SWD80N04V Datasheet

 

SWD80N04V Datasheet and Replacement


   Type Designator: SWD80N04V
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 104 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 40 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 80 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 55 nS
   Cossⓘ - Output Capacitance: 323 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.009 Ohm
   Package: TO252
 

 SWD80N04V substitution

   - MOSFET ⓘ Cross-Reference Search

 

SWD80N04V Datasheet (PDF)

 ..1. Size:658K  samwin
 swi80n04v swd80n04v.pdf pdf_icon

SWD80N04V

SW80N04V N-channel Enhanced mode TO-251/TO-252 MOSFET Features BVDSS : 40V TO-251 TO-252 ID : 80A High ruggedness Low RDS(ON) Typ 7.2m@VGS=4.5V RDS(ON) : 7.2m@VGS=4.5V Typ 6.0m@VGS=10V 6.0m@VGS=10V Low Gate Charge (Typ 49nC) Improved dv/dt Capability 1 1 2 2 2 100% Avalanche Tested 3 3 Application: LED, Charger, Ada

Datasheet: SWD7N60K2F , SWD7N65DA , SWD7N65DD , SWD7N65J , SWD7N65K , SWD7N65K2 , SWD7N65M , SWD7N70K , 60N06 , SWD830D1 , SWD8N65D , SWD8N70K , SWD8N80K , SWD9N10V1 , SWD9N25D , SWD9N50D , SWF10N50K .

History: IRL3716PBF | STB70NF03LT4 | SSW4668 | IPI50N10S3L-16 | IRFB3306PBF | IRF7701G | HY3403U

Keywords - SWD80N04V MOSFET datasheet

 SWD80N04V cross reference
 SWD80N04V equivalent finder
 SWD80N04V lookup
 SWD80N04V substitution
 SWD80N04V replacement

 

 
Back to Top

 


 
.