All MOSFET. SWD80N04V Datasheet

 

SWD80N04V Datasheet and Replacement


   Type Designator: SWD80N04V
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 104 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 40 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 80 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 55 nS
   Cossⓘ - Output Capacitance: 323 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.009 Ohm
   Package: TO252
 

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SWD80N04V Datasheet (PDF)

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SWD80N04V

SW80N04V N-channel Enhanced mode TO-251/TO-252 MOSFET Features BVDSS : 40V TO-251 TO-252 ID : 80A High ruggedness Low RDS(ON) Typ 7.2m@VGS=4.5V RDS(ON) : 7.2m@VGS=4.5V Typ 6.0m@VGS=10V 6.0m@VGS=10V Low Gate Charge (Typ 49nC) Improved dv/dt Capability 1 1 2 2 2 100% Avalanche Tested 3 3 Application: LED, Charger, Ada

Datasheet: SWD7N60K2F , SWD7N65DA , SWD7N65DD , SWD7N65J , SWD7N65K , SWD7N65K2 , SWD7N65M , SWD7N70K , EMB04N03H , SWD830D1 , SWD8N65D , SWD8N70K , SWD8N80K , SWD9N10V1 , SWD9N25D , SWD9N50D , SWF10N50K .

History: DMN60H4D5SK3 | STL7N6LF3 | 2SK3818 | SES744 | 45N06 | 2SK3819 | FDS89141

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