SWD80N04V PDF and Equivalents Search

 

SWD80N04V Specs and Replacement

Type Designator: SWD80N04V

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 104 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 40 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 80 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 55 nS

Cossⓘ - Output Capacitance: 323 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.009 Ohm

Package: TO252

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SWD80N04V datasheet

 ..1. Size:658K  samwin
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SWD80N04V

SW80N04V N-channel Enhanced mode TO-251/TO-252 MOSFET Features BVDSS 40V TO-251 TO-252 ID 80A High ruggedness Low RDS(ON) Typ 7.2m @VGS=4.5V RDS(ON) 7.2m @VGS=4.5V Typ 6.0m @VGS=10V 6.0m @VGS=10V Low Gate Charge (Typ 49nC) Improved dv/dt Capability 1 1 2 2 2 100% Avalanche Tested 3 3 Application LED, Charger, Ada... See More ⇒

Detailed specifications: SWD7N60K2F, SWD7N65DA, SWD7N65DD, SWD7N65J, SWD7N65K, SWD7N65K2, SWD7N65M, SWD7N70K, IRLB3034, SWD830D1, SWD8N65D, SWD8N70K, SWD8N80K, SWD9N10V1, SWD9N25D, SWD9N50D, SWF10N50K

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