SWF14N50D Specs and Replacement
Type Designator: SWF14N50D
Type of Transistor: MOSFET
Type of Control Channel: N-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 34.7 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 500 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
|Id| ⓘ - Maximum Drain Current: 14 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Electrical Characteristics
tr ⓘ - Rise Time: 33 nS
Cossⓘ - Output Capacitance: 211 pF
RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.45 Ohm
Package: TO220F
SWF14N50D substitution
- MOSFET ⓘ Cross-Reference Search
SWF14N50D datasheet
swf14n50d.pdf
SW14N50D N-channel Enhanced mode TO-220F MOSFET Features TO-220F BVDSS 500V High ruggedness Low RDS(ON) (Typ 0.38 )@VGS=10V ID 14A Low Gate Charge (Typ 54nC) RDS(ON) 0.38 Improved dv/dt Capability 100% Avalanche Tested 2 1 Application Charger, Adaptor, LED 2 3 1 1. Gate 2. Drain 3. Source General Description 3 This power MOSFET is produce... See More ⇒
Detailed specifications: SWF12N60D, SWF13N50D, SWF13N60D, SWF13N60K2, SWF13N65D, SWF13N65K2, SWF13N70D, SWF13N80K, IRF640, SWF15N50, SWF15N50DA, SWF16N60D, SWF16N60K, SWF16N70D, SWF16N70K, SWF17N50D, SWF17N80K
Keywords - SWF14N50D MOSFET specs
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Can't find your MOSFET? Learn how to find a substitute transistor by analyzing voltage, current and package compatibility
History: 4N65G-TND-R
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