SWF2N60DB
MOSFET. Datasheet pdf. Equivalent
Type Designator: SWF2N60DB
Marking Code: SW2N60DB
Type of Transistor: MOSFET
Type of Control Channel: N
-Channel
Pdⓘ
- Maximum Power Dissipation: 20.2
W
|Vds|ⓘ - Maximum Drain-Source Voltage: 600
V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 30
V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4.5
V
|Id|ⓘ - Maximum Drain Current: 2
A
Tjⓘ - Maximum Junction Temperature: 150
°C
Qgⓘ - Total Gate Charge: 10
nC
trⓘ - Rise Time: 22
nS
Cossⓘ -
Output Capacitance: 45
pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 4.5
Ohm
Package:
TO220F
SWF2N60DB
Transistor Equivalent Substitute - MOSFET Cross-Reference Search
SWF2N60DB
Datasheet (PDF)
..1. Size:645K samwin
swf2n60db.pdf
SW2N60DB N-channel Enhanced mode TO-220F MOSFET BVDSS : 600V Features TO-220F ID : 2A High ruggedness RDS(ON) : 3.9 Low RDS(ON) (Typ 3.9)@VGS=10V Low Gate Charge (Typ 10nC) 2 Improved dv/dt Capability 100% Avalanche Tested 1 2 Application:Motor ControlInverter 3 1 1. Gate 2. Drain 3. Source 3 General Description This power
8.1. Size:705K samwin
swf2n65d.pdf
SW2N65D N-channel Enhanced mode TO-220F MOSFET Features TO-220F BVDSS : 650V ID : 2A High ruggedness Low RDS(ON) (Typ 3.9)@VGS=10V RDS(ON) : 3.9 Low Gate Charge (Typ 9nC) Improved dv/dt Capability 2 100% Avalanche Tested 1 2 Application:Adapter,LED 3 1 1. Gate 2. Drain 3. Source 3 General Description This power MOSFET is produc
8.2. Size:644K samwin
swf2n65db.pdf
SW2N65DB N-channel Enhanced mode TO-220F MOSFET TO-220F BVDSS : 650V Features ID : 2A High ruggedness RDS(ON) : 3.9 Low RDS(ON) (Typ 3.9)@VGS=10V Low Gate Charge (Typ 11nC) 2 Improved dv/dt Capability 1 100% Avalanche Tested 2 1 3 Application: LED , Charger, Adaptor 1. Gate 2. Drain 3. Source 3 General Description This power
9.1. Size:783K samwin
swf2n90k2.pdf
SW2N90K2 N-channel Enhanced mode TO-220F MOSFET TO-220F BVDSS : 900V Features ID : 2A High ruggedness RDS(ON) : 2.2 Low RDS(ON) (Typ 2.2)@VGS=10V Low Gate Charge (Typ 13nC) 2 Improved dv/dt Capability 1 100% Avalanche Tested 2 1 3 Application: UPS,LED,SMPS 1. Gate 2. Drain 3. Source 3 General Description This power MOSFET is
9.2. Size:1061K samwin
swn2n70d swd2n70d swl2n70d swf2n70d.pdf
SW2N70D N-channel Enhanced mode TO-251N/TO-252/TO-126/TO-220F MOSFET Features BVDSS : 700V TO-220F TO-251N TO-252 TO-126 ID : 2A High ruggedness Low RDS(ON) (Typ 5)@VGS=10V RDS(ON) : 5 Low Gate Charge (Typ 11nC) Improved dv/dt Capability 2 100% Avalanche Tested 1 1 1 1 2 2 2 2 Application: Charger,LED 3 3 3 3 1 1. Gate 2.
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